No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Compact model for organic thin-film transistor with Gaussian density of states
1.W. S. Zhao, J. Duval, D. Ravelosona, J. -O. Klein, J. V. Kim, and C. Chappert, J. Appl. Phys. 109, 07D501 (2011).
9.G. Gildenblat, X. Li, W. Wu, H. Wang, A. Jha, R. van Langevelde, Geert D. J. Smit, Andries J. Scholten, and D. B. M. Klaassen, IEEE Trans. Electron Dev. 53, 1979 (2006).
17.D. E. Ward, Ph.D. dissertation,Stanford Univ., Stanford, CA, 1981.
18.T. Zaki, S. Scheinert, I. Hörselmann, R. Rödel, F. Letzkus, H. Richter, U. Zschieschang, H. Klauk, and J. N. Burghartz, IEEE Trans. Electron Dev. 61, 98 (2014).
Article metrics loading...
Developing a compact model for organic thin-film transistors (OTFTs) would be significant for designing organic circuits. Contrasting the traditional silicon transistors, OTFTs are theorized using hopping transport and a Gaussian density of states. In this work, we present a new compact model for OTFTs by introducing hopping transport theory, a Gaussian density of states, and a physical mobility
model. Our compact model is completely based on surface potential and its simulations do not require any threshold voltage. Simulations based on this model agree well with experimental data.
Full text loading...
Most read this month