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/content/aip/journal/adva/5/4/10.1063/1.4919111
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/content/aip/journal/adva/5/4/10.1063/1.4919111
2015-04-22
2016-09-29

Abstract

The Al:ZnO/Cu SnS semiconductor heterojunction was fabricated. The structural and optical properties of the semiconductor materials were studied. The band offset at the Al:ZnO/Cu SnS heterojunction was studied using X-ray photoelectron spectroscopy technique. From the measurement of the core level energies and valence band maximum of the constituent elements, the valence band offset was calculated to be −1.1 ± 0.24 eV and the conduction band offset was 0.9 ± 0.34 eV. The band alignment at the heterojunction was found to be of type-I. The study of Al:ZnO/Cu SnS heterojunction is useful for solar cell applications.

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