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/content/aip/journal/adva/5/4/10.1063/1.4919624
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/content/aip/journal/adva/5/4/10.1063/1.4919624
2015-04-28
2016-12-04

Abstract

An approximately 31% I improvement and 42% mobility enhancement are achieved on the planer Ge n-Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) by implementing the dislocation-stress memorization technology (D-SMT) stressor for the first time, based on an investigation of crystal re-growth velocities along different directions and the optimization of the dislocation angle (θ) in Ge. Ultra-high stress (>3 GPa) capping SiN film is found to be essential for modifying the crystal re-growth velocities along the [100] and [110] directions to optimize the θ. The change of crystal re-growth velocities and the mobility enhancement ratio with the stress along the assigned directions in Ge is also discussed, respectively.

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