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1.
1.R. Waser and M. Aono, Nature Materials 6, 833 (2007).
http://dx.doi.org/10.1038/nmat2023
2.
2.E. Linn, R. Rosezin, C. Kuegeler, and R. Waser, Nature Materials 9, 403 (2010).
http://dx.doi.org/10.1038/nmat2748
3.
3.D. S. Jeong, H. Schroeder, U. Breuer, and R. Waser, Journal of Applied Physics 104, 123716 (2008).
http://dx.doi.org/10.1063/1.3043879
4.
4.M. Janousch, G. I. Meijer, U. Staub, B. Delley, S. F. Karg, and B. P. Andreasson, Advanced Materials 19, 2232 (2007).
http://dx.doi.org/10.1002/adma.200602915
5.
5.R. Dittmann, R. Muenstermann, I. Krug, D. Park, T. Menke, J. Mayer, A. Besmehn, F. Kronast, C. Schneider, and R. Waser, Proceedings of the IEEE 100, 1979 (2012).
http://dx.doi.org/10.1109/JPROC.2012.2188771
6.
6.R. Muenstermann, T. Menke, R. Dittmann, S. Mi, C.-L. Jia, D. Park, and J. Mayer, Journal of Applied Physics 108, 124504 (2010).
http://dx.doi.org/10.1063/1.3520674
7.
7.K. Shibuya, R. Dittmann, S. Mi, and R. Waser, Advanced Materials 22, 411 (2010).
http://dx.doi.org/10.1002/adma.200901493
8.
8.D. M. Smyth, The defect chemistry of metal oxides (Oxford University Press, New York, 2000).
9.
9.D. J. Keeble, S. Wicklein, L. Jin, C. L. Jia, W. Egger, and R. Dittmann, Physical Review B 87, 195409 (2013).
http://dx.doi.org/10.1103/PhysRevB.87.195409
10.
10.T. Suzuki, Y. Nishi, and M. Fujimoto, Philosophical Magazine A 80, 621 (2000).
http://dx.doi.org/10.1080/01418610008212072
11.
11.Y. Tokuda, S. Kobayashi, T. Ohnishi, T. Mizoguchi, N. Shibata, Y. Ikuhara, and T. Yamamoto, Applied Physics Letters 99, 173109 (2011).
http://dx.doi.org/10.1063/1.3656340
12.
12.T. Ohnishi, K. Shibuya, T. Yamamoto, and M. Lippmaa, Journal of Applied Physics 103, 103703 (2008).
http://dx.doi.org/10.1063/1.2921972
13.
13.Y. Tokuda, S. Kobayashi, T. Ohnishi, T. Mizoguchi, N. Shibata, Y. Ikuhara, and T. Yamamoto, Applied Physics Letters 99, 033110 (2011).
http://dx.doi.org/10.1063/1.3616136
14.
14.H. Du, C. Jia, J. Mayer, J. Barthel, C. Lenser, and R. Dittmann, (2015).
15.
15.W. Jiang, M. Noman, Y. M. Lu, J. A. Bain, P. A. Salvador, and M. Skowronski, Journal of Applied Physics 110, 034509 (2011).
http://dx.doi.org/10.1063/1.3622623
16.
16.R. J. Kamaladasa, M. Noman, W. Chen, P. A. Salvador, J. A. Bain, M. Skowronski, and Y. N. Picard, Journal of Applied Physics 113, 234510 (2013).
http://dx.doi.org/10.1063/1.4811525
17.
17.C. Lenser, Z. Connell, A. Kovcs, R. Dunin-Borkowski, A. Koehl, R. Waser, and R. Dittmann, Applied Physics Letters 102, 183504 (2013).
http://dx.doi.org/10.1063/1.4804364
18.
18.Y. S. Kim, J. Kim, M. J. Yoon, C. H. Sohn, S. B. Lee, D. Lee, B. C. Jeon, H. K. Yoo, T. W. Noh, A. Bostwick, E. Rotenberg, J. Yu, S. D. Bu, and B. S. Mun, Applied Physics Letters 104, 013501 (2014).
http://dx.doi.org/10.1063/1.4860961
19.
19.S. Wicklein, A. Sambri, S. Amoruso, X. Wang, R. Bruzzese, A. Koehl, and R. Dittmann, Applied Physics Letters 101, 131601 (2012).
http://dx.doi.org/10.1063/1.4754112
20.
20.C. Xu, S. Wicklein, A. Sambri, S. Amoruso, M. Moors, and R. Dittmann, Journal of Physics D: Applied Physics 47, 034009 (2014).
http://dx.doi.org/10.1088/0022-3727/47/3/034009
21.
21.S. M. Sze and K. K. Ng, Physics of Semiconductor Devices (John Wiley & Sons, 2006).
22.
22.S. Menzel, M. Waters, A. Marchewka, U. Boettger, R. Dittmann, and R. Waser, Advanced Functional Materials 21, 4487 (2011).
http://dx.doi.org/10.1002/adfm.201101117
23.
23.D. Ielmini, F. Nardi, and C. Cagli, Nanotechnology 22, 254022 (2011).
http://dx.doi.org/10.1088/0957-4484/22/25/254022
24.
24.G. Bersuker, D. C. Gilmer, D. Veksler, P. Kirsch, L. Vandelli, A. Padovani, L. Larcher, K. McKenna, A. Shluger, V. Iglesias, M. Porti, and M. Nafra, Journal of Applied Physics 110, 124518 (2011).
http://dx.doi.org/10.1063/1.3671565
25.
25.W. Jiang, R. J. Kamaladasa, Y. M. Lu, A. Vicari, R. Berechman, P. A. Salvador, J. A. Bain, Y. N. Picard, and M. Skowronski, Journal of Applied Physics 110, 054514 (2011).
http://dx.doi.org/10.1063/1.3633271
26.
26.V. Metlenko, A. H. H. Ramadan, F. Gunkel, H. Du, H. Schraknepper, S. Hoffmann-Eifert, R. Dittmann, R. Waser, and R. A. D. Souza, Nanoscale 6, 12864 (2014).
http://dx.doi.org/10.1039/C4NR04083J
27.
27.M. Schie, A. Marchewka, T. Mueller, R. A. D. Souza, and R. Waser, Journal of Physics: Condensed Matter 24, 485002 (2012).
http://dx.doi.org/10.1088/0953-8984/24/48/485002
28.
28.Z. Zhang, W. Sigle, W. Kurtz, and M. Ruehle, Physical Review B 66, 214112 (2002).
http://dx.doi.org/10.1103/PhysRevB.66.214112
29.
29.H. Du, C.-L. Jia, L. Houben, V. Metlenko, R. A. De Souza, R. Waser, and J. Mayer, Acta Materialia 89, 344 (2015).
http://dx.doi.org/10.1016/j.actamat.2015.02.016
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/content/aip/journal/adva/5/4/10.1063/1.4919697
2015-04-29
2016-12-10

Abstract

Resistive switching oxides are investigated at great length as promising candidates for the next generation of non-volatile memories. It is generally assumed that defects have a strong impact on the resistive switching properties of transition metal oxides. However, the correlation between different types of defect structures and the switching properties is still elusive. We deposited single-crystalline SrTiO thin films with various cation stoichiometry by pulsed laser deposition to investigate the stoichiometry related and therefore defect dependent influence on the resistive switching properties. This letter will reveal the differences in initial states, forming steps, switching characteristics as well as retention times taking into account both point defects and extended defects. We then propose an explanation on the basis of oxygen vacancy generation and redistribution to elucidate the dependence of the resistive switching properties on the cation stoichiometry dependent defect structure.

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/deliver/fulltext/aip/journal/adva/5/4/1.4919697.html;jsessionid=fU-yBm7WISXj25VYcghMPgXP.x-aip-live-06?itemId=/content/aip/journal/adva/5/4/10.1063/1.4919697&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
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&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/5/4/10.1063/1.4919697&pageURL=http://scitation.aip.org/content/aip/journal/adva/5/4/10.1063/1.4919697'
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