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/content/aip/journal/adva/5/5/10.1063/1.4919800
2015-05-01
2016-12-09

Abstract

The electrical performance of MoS can be engineered by introducing high- dielectrics, while the interactions between high- dielectrics and MoS need to be studied. In this study, multilayer MoS field-effect transistors (FETs) with a back-gated configuration were fabricated on high- AlO coated Si substrates. Compared with MoS FETs on SiO, the field-effect mobility ( ) and subthreshold swing (SS) were remarkably improved in MoS/AlO/Si. The improved was thought to result from the dielectric screening effect from high- AlO. When a HfO passivation layer was introduced on the top of MoS/AlO/Si, the field-effect mobility was further enhanced, which was thought to be concerned with the decreased contact resistance between the metal and MoS. Meanwhile, the interface trap density increased from 2.4×1012 eV−1cm−2 to 6.3×1012 eV−1cm−2. The increase of the off-state current and the negative shift of the threshold voltage may be related to the increase of interface traps.

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