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Electrical performance of multilayer MoS2
transistors on high-κ
coated Si substrates
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The electrical performance of MoS2 can be engineered by introducing high-κ
dielectrics, while the interactions between high-κ
dielectrics and MoS2 need to be studied. In this study, multilayer MoS2
(FETs) with a back-gated configuration were fabricated on high-κ Al2O3 coated Si substrates. Compared with MoS2
FETs on SiO2, the field-effect mobility (μ
FE) and subthreshold swing (SS) were remarkably improved in MoS2/Al2O3/Si. The improved μ
FE was thought to result from the dielectric screening effect from high-κ Al2O3. When a HfO2
passivation layer was introduced on the top of MoS2/Al2O3/Si, the field-effect mobility was further enhanced, which was thought to be concerned with the decreased contact resistance between the metal and MoS2. Meanwhile, the interface trap density increased from 2.4×1012 eV−1cm−2 to 6.3×1012 eV−1cm−2. The increase of the off-state current and the negative shift of the threshold voltage may be related to the increase of interface traps.
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