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We report the use of two Raman signatures, the Bi-induced longitudinal-optical-plasmon-coupled (LOPC) mode and the GaAs Fröhlich scattering intensity, present in (100) GaAs Bi to predict the 300K photoluminescence intensity and Bi composition (y) in GaAs Bi. The LOPC mode is used to calculate the hole concentration in GaAs Bi epitaxial layers. A linear relationship between hole concentration and photoluminescence intensity is found for a range of samples grown at various temperatures and growth rates. In addition, the composition (y) of Bi in GaAs Bi is also found to be linearly related to the GaAs Fröhlich scattering intensity.


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