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1.
1.T. Dietl, H. Ohno, F. Matsukura, J. Cibert, and D. Ferrand, Science 287, 1019 (2000).
http://dx.doi.org/10.1126/science.287.5455.1019
2.
2.K. Sato and H. Katayama-Yoshida, Phys. B 308, 904 (2001).
http://dx.doi.org/10.1016/S0921-4526(01)00834-1
3.
3.S. Venkatesh, J. B. Franklin, M. P. Ryan, J.-S. Lee, Hendrik Ohldag, M. A. McLachlan, N. M. Alford, and I. S. Roqan, J. Appl. Phys. 117, 013913 (2015).
http://dx.doi.org/10.1063/1.4905585
4.
4.Y. F. Tian, S. S. Yan, Q. Cao, J. X. Deng, Y. X. Chen, G. L. Liu, L. M. Mei, and Y. Qiang, Phys. Rev. B 79, 115209 (2009).
http://dx.doi.org/10.1103/PhysRevB.79.115209
5.
5.J. Qi, D. Q. Gao, J. H. Liu, W. G. Yang, Q. Wang, J. Y. Zhou, Y. H. Yang, and J. L. Liu, Applied Physics A-Mater. Sci. Process 100, 79 (2010).
http://dx.doi.org/10.1007/s00339-010-5796-8
6.
6.H. M. Chen, X. C. Liu, S. Y. Zhuo, Z. Xiong, R. W. Zhou, F. Li, and E. W. Shi, AIP Advances 4, 047121 (2014).
http://dx.doi.org/10.1063/1.4871937
7.
7.L. B. Shi, C. Y. Xu, and H. K. Yuan, Physica B 406, 3187 (2011).
http://dx.doi.org/10.1016/j.physb.2011.05.022
8.
8.X. H. Zhou, Y. Huang, X. S. Chen, and W. Lu, Solid State Commun. 152, 19 (2012).
http://dx.doi.org/10.1016/j.ssc.2011.10.019
9.
9.E. J. Kan, F. Wu, H. P. Wu, C. Y. Xiao, H. J. Xiang, and K. M. Deng, Appl. Phys. Lett. 102, 022422 (2013).
http://dx.doi.org/10.1063/1.4788726
10.
10.X. J. Liu, C. Song, F. Zeng, F. Pan, B. He, and W. S. Yan, J. Appl. Phys. 103, 093911 (2008).
http://dx.doi.org/10.1063/1.2919065
11.
11.F. Schoofs, T. Fix, A. Hakimi, S. S. Dhesi, G. van der Laan, S. A. Cavill, S. Langridge, J. L. MacManus-Driscoll, and M. G. Blamire, J. Appl. Phys. 108, 053911 (2010).
http://dx.doi.org/10.1063/1.3455856
12.
12.Z. Xiong, X. C. Liu, S. Y. Zhuo, J. H. Yang, E. W. Shi, and W. S. Yan, Appl. Phys. Lett. 99, 052513 (2011).
http://dx.doi.org/10.1063/1.3624589
13.
13.G. Sanon, R. Rup, and A. Mansingh, Thin Solid Films 190, 287 (1990).
http://dx.doi.org/10.1016/0040-6090(89)90918-8
14.
14.S. Maniv, W. D. Westwood, and E. Colombini, J. Vac. Sci. Technol. 20, 162 (1982).
http://dx.doi.org/10.1116/1.571350
15.
15.C. Z. Wang, Z. Chen, H. Q. Hu, and D. Zhang, Physica B 404, 4075 (2009).
http://dx.doi.org/10.1016/j.physb.2009.07.165
16.
16.V. Castel, C. Brosseau, and J. Ben Youssef, J. Appl. Phys. 106, 064312 (2009).
http://dx.doi.org/10.1063/1.3225567
17.
17.T. S. Herng, M. F. Wong, D. C. Qi, J. B. Yi, A. Kumar, A. Huang, F. C. Kartawidjaja, S. Smadici, P. Abbamonte, C. Sanchez-Hanke, S. Shannigrahi, J. M. Xue, J. Wang, Y. P. Feng, A. Rusydi, K. Y. Zeng, and J. Ding, Adv. Mater. 23, 1635 (2011).
http://dx.doi.org/10.1002/adma.201004519
18.
18.J. Dai, C. X. Xu, X. W. Sun, and X. H. Zhang, Appl. Phys. Lett. 98, 161110 (2011).
http://dx.doi.org/10.1063/1.3579140
19.
19.Y. M. Hu, S. S. Li, and C. H. Chia, Appl. Phys. Lett. 98, 052503 (2011).
http://dx.doi.org/10.1063/1.3549696
20.
20.Y. W. Ma, J. Ding, D. C. Qi, J. B. Yi, H. M. Fan, H. Gong, A. T. S. Wee, and A. Rusydi, Appl. Phys. Lett. 95, 072501 (2009).
http://dx.doi.org/10.1063/1.3206654
21.
21.D. Q. Gao, J. Zhang, G. J. Yang, J. L. Zhang, Z. H. Shi, J. Qi, Z. H. Zhang, and D. S. Xue, J. Phys. Chem. C 114, 13477 (2010).
http://dx.doi.org/10.1021/jp103458s
22.
22.Y. Z. Zhang and E. Q. Xie, Applied Physics A-Mater. Sci. Process 99, 955 (2010).
http://dx.doi.org/10.1007/s00339-010-5703-3
23.
23.Z. Q. Chen, S. Yamamoto, M. Maekawa, A. Kawasuso, X. L. Yuan, and T. Sekiguchi, J. Appl. Phys. 94, 4807 (2003).
http://dx.doi.org/10.1063/1.1609050
24.
24.Y. Ma, G. T. Du, S. R. Yang, Z. T. Li, B. J. Zhao, X. T. Yang, T. P. Yang, Y. T. Zhang, and D. L. Liu, J. Appl. Phys. 95, 6268 (2004).
http://dx.doi.org/10.1063/1.1713040
25.
25.Y. F. Gu, X. M. Li, J. H. Zhao, W. D. Yu, and X. D. Gao, J. Cryst. Growth 308, 1 (2007).
http://dx.doi.org/10.1016/j.jcrysgro.2007.07.016
26.
26.L. X. Yang, X. F. Wang, Z. G. Li, P. Liu, F. M. Liu, S. B. Ge, F. Q. Song, B. Liu, Y. Shi, and R. Zhang, J. Phys.D 44, 355403 (2011).
http://dx.doi.org/10.1088/0022-3727/44/35/355403
27.
27.C. S. Ong, T. S. Herng, X. L. Huang, Y. P. Feng, and J. Ding, J. Phys. Chem. C 116, 610 (2012).
http://dx.doi.org/10.1021/jp205251z
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/content/aip/journal/adva/5/6/10.1063/1.4922141
2015-06-01
2016-12-08

Abstract

Er-doped ZnO thin films have been prepared by using inductively coupled plasma enhanced physical vapor deposition at different O:Ar gas flow ratio (R = 0:30, 1:30, 1:15, 1:10 and 1:6). The influence of oxygen partial pressure on the structural, optical and magnetic properties was studied. It is found that an appropriate oxygen partial pressure (R=1:10) can produce the best crystalline quality with a maximum grain size. The internal strain, estimated by fitting the X-ray diffraction peaks, varied with oxygen partial pressure during growth. PL measurements show that plenty of defects, especially zinc vacancy, exist in Er-doped ZnO films. All the samples show room-temperature ferromagnetism. Importantly, the saturation magnetization exhibits similar dependency on oxygen partial pressure with the internal strain, which indicates that internal strain has an important effect on the magnetic properties of Er-doped ZnO thin films.

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