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1.
1.M. Miyao, E. Murakami, H. Etoh, K. Nakagawa, and A. Nishida, J. Cryst. Growth 111, 912 (1991).
http://dx.doi.org/10.1016/0022-0248(91)91106-K
2.
2.M. V. Fischetti and S. E. Laux, J. Appl. Phys. 80, 2234 (1996).
http://dx.doi.org/10.1063/1.363052
3.
3.J. Liu, R. Camacho-Aguilera, J. T. Bessette, X. Sun, X. Wang, Y. Cai, L. C. Kimerling, and J. Michel, Thin Solid Films 520, 3354 (2012).
http://dx.doi.org/10.1016/j.tsf.2011.10.121
4.
4.Y. Kim, M. Takenaka, T. Osada, M. Hata, and S. Takagi, Scientific Reports 4, 4683 (2014).
5.
5.J. Olivares, A. Rodriguez, J. Sangrador, T. Rodriguez, C. Ballesteros, and A. Kling, Thin Solid Films 337, 51 (1999).
http://dx.doi.org/10.1016/S0040-6090(98)01388-1
6.
6.K. Toko, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 94, 192106 (2009).
http://dx.doi.org/10.1063/1.3136857
7.
7.H. Watakabe, T. Sameshima, H. Kanno, T. Sadoh, and M. Miyao, J. Appl. Phys. 95, 6457 (2004).
http://dx.doi.org/10.1063/1.1707216
8.
8.W. Yeh, H. Chen, H. Huang, C. Hsiao, and J. Jeng, Appl. Phys. Lett. 93, 094103 (2008).
http://dx.doi.org/10.1063/1.2977965
9.
9.K. Toko, R. Numata, N. Oya, N. Fukata, N. Usami, and T. Suemasu, Appl. Phys. Lett. 104, 022106 (2014).
http://dx.doi.org/10.1063/1.4861890
10.
10.J.-H. Park, T. Suzuki, M. Kurosawa, M. Miyao, and T. Sadoh, Appl. Phys. Lett. 103, 082102 (2013).
http://dx.doi.org/10.1063/1.4819015
11.
11.Y. Liu, M. D. Deal, and J. D. Plummer, Appl. Phys. Lett. 84, 2563 (2004).
http://dx.doi.org/10.1063/1.1691175
12.
12.M. Miyao, T. Tanaka, K. Toko, and M. Tanaka, Appl. Phys. Express 2, 045503 (2009).
http://dx.doi.org/10.1143/APEX.2.045503
13.
13.K. Toko, Y. Ohta, T. Tanaka, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 99, 032103 (2011).
http://dx.doi.org/10.1063/1.3611904
14.
14.M. Kurosawa, N. Kawabata, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 100, 172107 (2012).
http://dx.doi.org/10.1063/1.4705733
15.
15.X. Bai, C.-Y. Chen, P. B. Griffin, and J. D. Plummer, Appl. Phys. Lett. 104, 052104 (2014).
http://dx.doi.org/10.1063/1.4863976
16.
16.T. Hosoi, Y. Suzuki, T. Shimura, and H. Watanabe, Appl. Phys. Lett. 105, 173502 (2014).
http://dx.doi.org/10.1063/1.4900442
17.
17.R. Matsumura, R. Kato, Y. Tojo, M. Kurosawa, T. Sadoh, and M. Miyao, ECS Solid State Lett. 3, P61 (2014).
http://dx.doi.org/10.1149/2.003405ssl
18.
18.R. Matsumura, Y. Tojo, M. Kurosawa, T. Sadoh, I. Mizushima, and M. Miyao, Appl. Phys. Lett. 101, 241904 (2012).
http://dx.doi.org/10.1063/1.4769998
19.
19.R. Matsumura, R. Kato, T. Sadoh, and M. Miyao, Appl. Phys. Lett. 105, 102106 (2014).
http://dx.doi.org/10.1063/1.4895512
20.
20.T. B. Massalski, in Binary alloy phase diagrams, edited by J. L. Murray, L. H. Bennet, and H. Baker (American Society for Metals, Ohio, 1986).
21.
21.E. Scheil, Z. Metallk. 34, 70 (1942).
http://aip.metastore.ingenta.com/content/aip/journal/adva/5/6/10.1063/1.4922266
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/content/aip/journal/adva/5/6/10.1063/1.4922266
2015-06-03
2016-12-03

Abstract

Formation of large-grain (≥30 μm) Ge crystals on insulating substrates is strongly desired to achieve high-speed thin-film transistors. For this purpose, we propose the methods of Sn-doping into amorphous-Ge combined with rapid-thermal-annealing (RTA) in the solid-liquid coexisting temperature region for the Ge-Sn alloy system. The densities of micro-crystal-nuclei formed in this temperature region become low by tuning the RTA temperature close to the liquidus curve, which enhances the lateral growth of GeSn. Thanks to the very small segregation coefficient of Sn, almost all Sn atoms segregate toward edges of the stripes during growth. Agglomeration of GeSn degrades the surface morphologies; however, it is significantly improved by lowering the initial Sn concentration. As a result, pure Ge with large crystal grains (∼40 μm) with smooth surface are obtained by optimizing the initial Sn concentration as low as 3 ∼ 5%. Lateral growth lengths are further increased through decreasing the number of nuclei in stripes by narrowing stripe width. In this way, high-crystallinity giant Ge crystals (∼200 μm) are obtained for the stripe width of 3 μm. This technique for formation of large-grain pure Ge crystals is very useful to realize high-performance thin-film devices on insulator.

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