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Influence of deposition temperature of thermal ALD deposited Al2
films on silicon surface passivation
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The effect of deposition temperature (T
) and subsequent annealing time (tanl) of atomic layer deposited
aluminum oxide (Al
2O3) films on silicon
surface passivation (in terms of surface recombination velocity, SRV) is investigated. The pristine samples (as-deposited) show presence of positive fixed charges, QF. The interface defect density (Dit) decreases with increase in T
which further decreases with tanl up to 100s. An effective surface passivation (SRV<8 cm/s) is realized for T
≥ 200 °C. The present investigation suggests that low thermal budget processing provides the same quality of passivation as realized by high thermal budget process (tanl between 10 to 30 min).
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