Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/5/6/10.1063/1.4922440
1.
1.H. J. Jang, J. G. Gu, and W. J. Cho, Sensors and Actuators, B: Chemical 181, 880-884 (2013).
http://dx.doi.org/10.1016/j.snb.2013.02.056
2.
2.J. T. Smith, S. S. Shah, M. Goryll, J. R. Stowell, and D. R. Allee, IEEE Sensors Journal 14(4), 937-938 (2014).
http://dx.doi.org/10.1109/JSEN.2013.2295057
3.
3.K. Takechi, S. Iwamatsu, T. Yahagi, Y. Abe, S. Kobayashi, and H. Tanabe, Japanese Journal of Applied Physics 53(7), 076702 (2014).
http://dx.doi.org/10.7567/JJAP.53.076702
4.
4.K. Takechi, S. Iwamatsu, T. Yahagi, Y. Abe, S. Kobayashi, and H. Tanabe, ECS Journal of Solid State Science and Technology 3(9), Q3076-Q3080 (2014).
http://dx.doi.org/10.1149/2.014409jss
5.
5.M. J. Schöning, Y. G. Mourzina, J. Schubert, W. Zander, A. Legin, Y. G. Vlasov, and H. Lüth, Sensors and Actuators B: Chemical 78(1–3), 273-278 (2001).
http://dx.doi.org/10.1016/S0925-4005(01)00825-5
6.
6.T. M. Pan and K. M. Liao, IEEE Sensors Journal 8(11), 1856-1861 (2008).
http://dx.doi.org/10.1109/JSEN.2008.2006259
7.
7.T. M. Pan and J. C. Lin, Sensors and Actuators, B: Chemical 138(2), 474-479 (2009).
http://dx.doi.org/10.1016/j.snb.2009.02.063
8.
8.T. M. Pan, M. D. Huang, C. W. Lin, and M. H. Wu, Sensors and Actuators, B: Chemical 144(1), 139-145 (2010).
http://dx.doi.org/10.1016/j.snb.2009.10.049
9.
9.J.-C. Lin, B.-R. Huang, and Y.-K. Yang, Sensors and Actuators B: Chemical 184(0), 27-32 (2013).
http://dx.doi.org/10.1016/j.snb.2013.04.060
10.
10.C. M. Yang, J. C. Wang, T. W. Chiang, Y. T. Lin, T. W. Juan, T. C. Chen, M. Y. Shih, C. E. Lue, and C. S. Lai, International Journal of Nanotechnology 11(1-4), 15-26 (2014).
http://dx.doi.org/10.1504/IJNT.2014.059806
11.
11.L.-T. Yin, J.-C. Chou, W.-Y. Chung, T.-P. Sun, and S.-K. Hsiung, Sensors and Actuators B: Chemical 71(1–2), 106-111 (2000).
http://dx.doi.org/10.1016/S0925-4005(00)00613-4
12.
12.S. Dastidar, A. Agarwal, N. Kumar, V. Bal, and S. Panda, Sensors Journal, IEEE 15(4), 2039-2045 (2015).
http://dx.doi.org/10.1109/JSEN.2014.2369739
13.
13.N. Kumar, J. Kumar, and S. Panda, ECS Journal of Solid State Science and Technology 4(3), N18-N23 (2015).
http://dx.doi.org/10.1149/2.0141503jss
14.
14.K. Nomura, A. Takagi, T. Kamiya, H. Ohta, M. Hirano, and H. Hosono, Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers 45(5 B), 4303-4308 (2006).
http://dx.doi.org/10.1143/JJAP.45.4303
15.
15.N. Thi Thu Thuy, O. Renault, B. Aventurier, G. Rodriguez, J. P. Barnes, and F. Templier, Display Technology, Journal of 9(9), 770-774 (2013).
http://dx.doi.org/10.1109/JDT.2013.2280842
16.
16.Y. Yu, Y. Bo, A. Jaesoo, P. C. McIntyre, P. M. Asbeck, M. J. W. Rodwell, and T. Yuan, Electron Devices, IEEE Transactions on 59(8), 2100-2106 (2012).
http://dx.doi.org/10.1109/TED.2012.2197000
17.
17.I. Krylov, L. Kornblum, A. Gavrilov, D. Ritter, and M. Eizenberg, Applied Physics Letters 100(17), 173508 (2012).
http://dx.doi.org/10.1063/1.4704925
18.
18.X. Du, B. T. Flynn, J. R. Motley, W. F. Stickle, H. Bluhm, and G. S. Herman, ECS Journal of Solid State Science and Technology 3(9), Q3045-Q3049 (2014).
http://dx.doi.org/10.1149/2.010409jss
http://aip.metastore.ingenta.com/content/aip/journal/adva/5/6/10.1063/1.4922440
Loading
/content/aip/journal/adva/5/6/10.1063/1.4922440
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/5/6/10.1063/1.4922440
2015-06-08
2016-12-10

Abstract

The use of a-IGZO instead of the conventional high-k dielectrics as a pH sensitive layer could lead to the simplification of fabrication steps of field effect based devices. In this work, the pH sensitivities of a-IGZO films directly deposited over a SiO2/Si surface were studied utilizing electrolyte-insulator-semiconductor (EIS) structures. Annealing of the films was found to affect the sensitivity of the devices and the device with the film annealed at 400 oC in N2 ambience showed the better sensitivity, which reduced with further increase in the annealing temperature to 500 oC. The increased pH sensitivity with the film annealed at 400 oC in N2 gas was attributed to the enhanced lattice oxygen ions (based on the XPS data) and improved C-V characteristics, while the decrease in sensitivity at an increased annealing temperature of 500 oC was attributed to defects in the films as well as the induced traps at the IGZO/SiO2 interface based on the stretched accumulation and the peak in the inversion region of C-V curves. This study could help to develop a sensor where the material (a-IGZO here) used as the active layer in a thin film transistors (TFTs) possibly could also be used as the pH sensitive layer without affecting the TFT characteristics, and thus obviating the need of high-K dielectrics for sensitivity enhancement.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/5/6/1.4922440.html;jsessionid=uLZzEFCPY4rXjosk7AMmx7hW.x-aip-live-06?itemId=/content/aip/journal/adva/5/6/10.1063/1.4922440&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/5/6/10.1063/1.4922440&pageURL=http://scitation.aip.org/content/aip/journal/adva/5/6/10.1063/1.4922440'
Right1,Right2,Right3,