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A note on the reaction between sputter co-deposited Mn and Si and formation of the MnSi phase
1.S. N. Nikolaev, V. V. Rylkov, B. A. Aronzon, K. I. Maslakov, I. A. Likhachev, E. M. Pashaev, K. Yu. Chernoglazov, A. S. Semisalova, N. S. Perov, V. A. Kul’bachinskii, O. A. Novodvorsky, A. V. Shorokhova, O. D. Khramova, E. V. Khaydukov, and V. Ya. Panchenko, Semiconductors 46, 1510 (2012).
2.V. V. Rylkov, S. N. Nikolaev, K. Yu. Chernoglazov, B. A. Aronzon, K. I. Maslakov, V. V. Tugushev, E. T. Kulatov, I. A. Likhachev, E. M. Pashaev, A. S. Semisalova, N. S. Perov, A. B. Granovskii, E. A. Gan’shina, O. A. Novodvorskii, O. D. Khramova, E. V. Khaidukov, and V. Ya. Panchenko, JETP Letters 96, 255 (2012).
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Mn and Si were magnetron co-sputtered on Si (100) substrates and annealed in the temperature range of 773-848 K in Ar atmosphere to obtain MnSi. The results were tested by XRD, high resolution SEM (HRSEM), 4 points probe measurements and AES. The activation energy calculated on the basis of XRD intensity is in the range of 0.43-0.71 eV. The Mehl-Johnson relation was applied for the determination of the activation energy interval. The HRSEM thicknesses evaluated are related to the intensity measurements. The constants appearing in the Mehl-Johnson equation were determined by graphical iteration. The activation energy calculated on the basis of film thickness is almost exactly the same as that obtained by XRD intensity measurements being in the range of 0.43 – 0.73. The results of the activation energy evaluation of MnSi formation and the method relating XRD intensities to the thickness are discussed.
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