No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Relationship between transport properties and band diagrams in InAs
Sb quantum wells
5.S. Datta, T. Ashley, R. Chau, K. Hilton, R. Jefferies, T. Martin, and T. Phillips, in IEEE Proceedings of the International Electron Devices Meeting (IEEE, New York, 2005), p. 763.
6.S. A. Solin, D. R. Hines, A. C. H. Rowe, J. S. Tsai, Yu. A. Pashkin, S. J. Chung, N. Goel, and M. B. Santos, Appl. Phys. Lett. 80, 4012 (2002).
7.S. Adachi, Properties of Semiconductor Alloys; Group-IV, III-V and II-VI Semiconductors (John Wiley & Sons Ltd, West Sussex, UK, 2009), p. 182.
11.A. Okamoto, A. Ashihara, and I. Shibasaki, in Proceedings of the 10th International Conference on Solid State Sensors and Actuators (1999) p. 514.
13.I. Shibasaki, Proceedings of the 10th International Conference on Narrow Gap Semiconductors, IPAP ConferenceSeries Vol. 2 (2001), p. 137.
17.I. Shibasaki, H. Geka, and A. Okamoto, Narrow Gap Semiconductors 2007, Springer Proceedings in Physics (2007), Vol. 199, p. 89.
18.S. Ishida, T. Manago, K. Oto, A. Fijimoto, H. Geka, A. Okamoto, and I. Shibasaki, Narrow Gap Semiconductors 2007, Springer Proceedings in Physics (2007), Vol. 199, p. 203.
Software for the simulation of electronic and optoelectronic semiconductor nanodevices and materials, http://www.nextnano.de/
30.W. E. Spicer, Z. L. Weber, E. Weber, N. Newman, T. Kendelewicz, R. Cao, C. McCants, P. Mahowald, K. Miyano, and I. Lindau, J. Vac. Sci. Technol. B 6, 1245 (1988).
Article metrics loading...
The resistivity of InAs
0.1Sb0.9/Al0.1In0.9Sb quantum wells
(QWs) is much lower than that of InSb/Al0.1In0.9Sb QWs, staying low resistivity even at low temperature. Fundamental difference in low temperature transport properties between InSb/Al0.1In0.9Sb and InAs
0.1Sb0.9/Al0.1In0.9Sb QWs was revealed, based on the band diagram calculations of these QWs. Band diagrams of InAs
/Al0.1In0.9Sb QWs showed that the energy band of the InAs
layer moves downward with increasing As content x. The QW is type I at x equal to 0, becomes type II at x equal to 0.1. The Fermi level (E
F) of the InSb
QWs lies in the band gap and below apart from the bottom of the conduction band, while E
F of the InAs
QWs is above the bottom of the conduction band of the well. The calculated sheet carrier densities are in good agreement with the experimental results. It well explains that the sheet carrier density difference between InSb and InAs
QWs mainly originates from this band diagram difference and the position of E
Full text loading...
Most read this month