Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/5/7/10.1063/1.4926460
1.
1.V. Bellitto, Atomic Force Microscopy - Imaging, Measuring and Manipulating Surfaces at the Atomic Scale (Intech, Croatia, 2012).
2.
2.A. L. Barabasi and H. E. Stanley, Fractal Concepts in Surface Growth (Cambridge University, London, 1995).
3.
3.V. Timoshevskii, Y. Ke, H. Guo, and D. Gall, Journal of Applied Physics 103, 113705 (2008).
http://dx.doi.org/10.1063/1.2937188
4.
4.G. Palasantzas, Phy. Rev. B 70, 195409-6 (2004).
5.
5.G. Palasantzas and J. Th. M. De Hosson, Phys. Rev. E 67, 21604-6 (2003).
http://dx.doi.org/10.1103/PhysRevE.67.021604
6.
6.D. L. Liu, J. Martin, and N. A. Burnham, Appl. Phys. Lett. 91, 31071-31073 (2007).
7.
7.M. J. Jawad, M. R. Hashim, and N. K. Ali, Int. J. Electrochem. Sci. 7, 1024410253 (2012).
8.
8.S. Luryi and E. Suhir, Appl. Phys. Lett. 49, 140-142 (1986).
http://dx.doi.org/10.1063/1.97204
9.
9.W. C. Elmore and M. A. Heald, Physics of Waves (McGraw-Hill Book Company, USA, 1969).
10.
10.H. C. Hsu, C. S. Cheng, C. C. Chang, S. Yang, C. S. Chang, and W. F. Hsieh, Nanotechnology 16, 297-301 (2005).
http://dx.doi.org/10.1088/0957-4484/16/2/021
11.
11.M. Wiesner, E. A. Angelopoulos, R. Roßbach, M. Jetter, and P. Michler, EW-MOVPE XIII, Ulm (2009).
12.
12.R. Shabannia and H. AbuHassan, Materials Letters 98, 135137 (2013).
http://dx.doi.org/10.1016/j.matlet.2013.01.127
13.
13.L. S. Chuah, Z. Hassan, S. S. Ng, and H. Abu Hassan, Journal of Alloys and Compounds 479, L54-L58 (2009).
http://dx.doi.org/10.1016/j.jallcom.2009.01.085
14.
14.T. G. S. Cruz, M. U. Kleinke, and A. Gorenstein, Appl. Phys. Lett. 81, 4922-4924 (2002).
http://dx.doi.org/10.1063/1.1530739
15.
15.J. Escorcia-Garcia, R. Cruz-Silva, and V. Agarwal, Appl. Surf. Sci. 256, 645649 (2009).
http://dx.doi.org/10.1016/j.apsusc.2009.08.035
16.
16.J. B. da Silva, Jr., E. A. de Vasconcelos, B. E. C. A. dos Santos, J. A. K. Freire, V. N. Freire, G. A. Farias, and E. F. da Silva, Jr., Microelectronics Journal 36, 10111015 (2005).
http://dx.doi.org/10.1016/j.mejo.2005.04.007
17.
17.F. Gentile, E. Battista, A. Accardo, M. L. Coluccio, M. Asande, G. Perozziello, G. Das, C. Liberale, F. De Angelis, P. Candeloro, P. Decuzzi, and E. Di Fabrizio, Microelectronic Engineering 88, 25372540 (2011).
http://dx.doi.org/10.1016/j.mee.2011.01.046
18.
18.N. Rahmani and R. S. Dariani, Superlattices and Microstructures 85, 504509 (2015).
http://dx.doi.org/10.1016/j.spmi.2015.05.048
19.
19.Z. Fekih, F. Z. Otmani, N. Ghellai, and N. E. Chabanne-Sari, M. J. Condensed Mate 7, 35-37 (2006).
20.
20.G. Cao and Y. Wang, Nanostructures and Nanomaterials, 2nd ed. (Word Scientific Publishing Co. Pte. Ltd, Singapore, 2011).
21.
21.D. Aurongzeb, M. Holtz, M. Daugherty, J. M. Berg, A. Chandolu, J. Yun, and H. Temkin, Appl. Phys. Lett. 83, 5437 (2003).
http://dx.doi.org/10.1063/1.1637155
22.
22.F. Family and T. Vicsek, J. Phys. A: Math. Gen. 18, 75-81 (1985).
http://dx.doi.org/10.1088/0305-4470/18/2/005
23.
23.V. Ioannou-Sougleridis, V. Constantoudisa, M. Alexeb, R. Scholz, G. Vellianitisc, and A. Dimoulas, Thin Solid Films 468, 303 (2004).
http://dx.doi.org/10.1016/j.tsf.2004.05.076
24.
24.S. K. Sinha, E. B. Sirota, S. Garoff, and H. B. Stanley, Phys. Rev. B 38, 2297 (1988).
http://dx.doi.org/10.1103/PhysRevB.38.2297
25.
25.R. Buzio, E. Gnecco, C. Boragno, U. Valbusa, P. Piseri, E. Barborini, and P. Milani, Surf. Sci. 444, L1-L6 (2000).
http://dx.doi.org/10.1016/S0039-6028(99)01066-3
26.
26.G. C. Wang, Y. P. Zhao, and T. M. Lu, Characterization Amorphous Crystalline Rough Surface (Academic Press, New York, 2001).
27.
27.T. Nychyporuk, V. Lysenko, and D. Barbier, Phys. Rev. B 71, 115402(1-6) (2005).
http://dx.doi.org/10.1103/PhysRevB.71.115402
28.
28.S. Labat, C. Guichet, O. Thomas, B. Gilles, and A. Marty, Appl. Surf. Sci. 188, 182 (2002).
http://dx.doi.org/10.1016/S0169-4332(01)00739-5
http://aip.metastore.ingenta.com/content/aip/journal/adva/5/7/10.1063/1.4926460
Loading
/content/aip/journal/adva/5/7/10.1063/1.4926460
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/5/7/10.1063/1.4926460
2015-07-06
2016-12-02

Abstract

Porous silicon films with porosity ranging from 42% to 77% were fabricated by electrochemical anodization under different current density. We used atomic force microscopy and dynamic scaling theory for deriving the surface roughness profile and processing the topography of the porous silicon layers, respectively. We first compared the topography of bare silicon surface with porous silicon and then studied the effect of the porosity of porous silicon films on their scaling behavior by using their self-affinity nature. Our work demonstrated that silicon compared to the porous silicon films has the highest Hurst parameter, indicating that the formation of porous layer due to the anodization etching of silicon surface leads to an increase of its roughness. Fractal analysis revealed that the evolution of the nanocrystallites’ fractal dimension along with porosity. Also, we found that both interface width and Hurst parameter are affected by the increase of porosity.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/5/7/1.4926460.html;jsessionid=ZF1hW7VMg1prRXFVd10tphfe.x-aip-live-06?itemId=/content/aip/journal/adva/5/7/10.1063/1.4926460&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/5/7/10.1063/1.4926460&pageURL=http://scitation.aip.org/content/aip/journal/adva/5/7/10.1063/1.4926460'
Right1,Right2,Right3,