No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Switching kinetics of SiC resistive memory for harsh environments
3.S. Rahaman, S. Maikap, H. Chiu, C. Lin, T. Y. Wu, Y. S. Chen, P. J. Tzeng, F. Chen, M. J. Kao, and M. J. Tsai, in Memory Workshop, 2009. IMW ’09. IEEE International (2009) pp. 1–4.
5.M. Meier, S. Gilles, R. Rosezin, C. Schindler, S. Trellenkamp, A. Rüdiger, D. Mayer, C. Kügeler, and R. Waser, Microelectronic Engineering 86, 1060 (2009).
8.W. Lee, J. Park, M. Son, J. Lee, S. Jung, S. Kim, S. Park, J. Shin, and H. Hwang, Electron Device Letters, IEEE 32, 680 (2010).
12.W. Lee, M. Siddik, S. Jung, J. Park, S. Kim, J. Shin, J. Lee, S. Park, M. Son, and H. Hwang, Electron Device Letters, IEEE 32, 1573 (2011).
16.D. Fleetwood, F. Thome, S. Tsao, P. Dressendorfer, V. Dandini, and J. Schwank, Nuclear Science, IEEE Transactions on 35, 1099 (1988).
17.M. Pyun, H. Choi, J.-B. Park, D. Lee, M. Hasan, R. Dong, S.-J. Jung, J. Lee, D.-j. Seong, J. Yoon, and H. Hwang, Applied Physics Letters 93, 212907 (2008).
22.D. C. Kim, S. Seo, S. E. Ahn, D.-S. Suh, M. J. Lee, B.-H. Park, I. K. Yoo, I. G. Baek, H.-J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U.-I. Chung, J. T. Moon, and B. I. Ryu, Applied Physics Letters 88, 202102 (2006).
23.U. Russo, D. Ielmini, C. Cagli, A. Lacaita, S. Spiga, C. Wiemer, M. Perego, and M. Fanciulli, in Electron Devices Meeting, 2007. IEDM 2007. IEEE International (2007) pp. 775–778.
27.R. Fang, Y. Gonzalez Velo, W. Chen, K. E. Holbert, M. N. Kozicki, H. Barnaby, and S. Yu, Applied Physics Letters 104, 183507 (2014).
28.P. Dandamudi, H. Barnaby, M. Kozicki, Y. Gonzalez-Velo, and K. Holbert, in RADECS, 2013 14th European Conference on (2013) pp. 1–4.
29.H. J. Barnaby, M. Mclain, and I. S. Esqueda, Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms 261, 1142 (2007).
Article metrics loading...
Cu/a-SiC/Au resistive memory cells are measured using voltage pulses and exhibit the highest R
ratio recorded for any resistive memory. The switching kinetics are investigated and fitted to a numerical model, using thermal conductivity and resistivity properties of the dielectric. The SET mechanism of the Cu/a-SiC/Au memory cells is found to be due to ionic motion without joule heating contributions, whereas the RESET mechanism is found to be due to thermally assisted ionic motion. The conductive filament diameter is extracted to be around 4nm. The high thermal conductivity and resistivity for the Cu/a-SiC/Au memory cells result in slow switching but with high thermal reliability and stability, showing potential for use in harsh environments. Radiation properties of SiC memory cells are investigated. No change was seen in DC sweep or pulsed switching nor in conductive mechanisms, up to 2Mrad(Si) using 60Co gamma irradiation.
Full text loading...
Most read this month