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/content/aip/journal/adva/5/7/10.1063/1.4927402
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/content/aip/journal/adva/5/7/10.1063/1.4927402
2015-07-21
2016-09-29

Abstract

We report on GaN based field-effect transistor (FET) structures exhibiting sheet carrier densities of n = 2.9 1013 cm−2 for high-power transistor applications. By grading the indium-content of InGaN layers grown prior to a conventional GaN/AlN/AlInN FET structure control of the channel width at the GaN/AlN interface is obtained. The composition of the InGaN layer was graded from nominally x = 30 % to pure GaN just below the AlN/AlInN interface. Simulations reveal the impact of the additional InGaN layer on the potential well width which controls the sheet carrier density within the channel region of the devices. Benchmarking the InGaN/GaN/AlN/AlInN based FETs against GaN/AlN/AlInN FET reference structures we found increased maximum current densities of I = 1300 mA/mm (560 mA/mm). In addition, the InGaN layer helps to achieve broader transconductance profiles as well as reduced leakage currents.

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