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/content/aip/journal/adva/5/7/10.1063/1.4927498
2015-07-23
2016-12-06

Abstract

Boron-oxygen (B-O) complex in crystalline silicon (c-Si) solar cells is responsible for the light-induced efficiency degradation of solar cell. However, the formation mechanism of B-O complex is not clear yet. By calculation, it is found that the stagger-type oxygen dimer (O st) should be the component of B-O complex, whose movement occurs through its structure reconfiguration at low temperature, instead of its long-distance diffusion. The O st can form two stable “latent centers” with the B, which are recombination-inactive. The latent centers can be evolved into the metastable recombination centers via their structure transformation in the presence of excess carriers. These results can well explain the formation behaviors of B-O complexes in c-Si.

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