No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Ultrafast defect dynamics: A new approach to all optical broadband switching employing amorphous selenium thin films
2.D. Ballarini, M. De Giorgi, E. Cancellieri, R. Houdré, E. Giacobino, R. Cingolani, A. Bramati, G. Gigli, and D. Sanvitto, Nat. Commun. 4, 1778 (2013).
10.B.J. Eggleton, B. Luther-Davies, and K. Richardson, Nat. Photonics 5, 141 (2011).
19.S. Kasap, J.B. Frey, G. Belev, O. Tousignant, H. Mani, J. Greenspan, L. Laperriere, O. Bubon, A. Reznik, G. DeCrescenzo, K.S. Karim, and J.A. Rowlands, Sensors 11, 5112 (2011).
35.R. R. Alfano, Semiconductors Probed by Ultrafast Laser Spectroscopy Volume II (Academic Press, Inc, 1984).
Article metrics loading...
Optical switches offer higher switching speeds than electronics, however, in most cases utilizing the interband transitions of the active medium for switching. As a result, the signal suffers heavy losses. In this article, we demonstrate a simple and yet efficient ultrafast broadband all-optical switching on ps timescale in the sub-bandgap region of the a-Se thin film, where the intrinsic absorption is very weak. The optical switching is attributed to short-lived transient defects that form localized states in the bandgap and possess a large electron-phonon coupling. We model these processes through first principles simulation that are in agreement with the experiments.
Full text loading...
Most read this month