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/content/aip/journal/adva/5/7/10.1063/1.4927545
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/content/aip/journal/adva/5/7/10.1063/1.4927545
2015-07-24
2016-12-07

Abstract

In this paper, the structure of a graphene/silicon heterojunction solar cell has been studied under simulated conditions. The parameters of the cell’s layers have been optimized by using AFORS-HET software. Instead of reported 2D nature, we considered graphene as 3D in nature. To ensure the formation of Schottky junction, electrical contacts were made along c-axis to collect the minority carriers, which generate upon illumination. By optimizing the various parameters of n-type multilayer graphene, we achieved the best-simulated cell with the power conversion efficiency of 7.62 % at room temperature. Up to 40 layers of n-type graphene, the efficiency found to be constant and enhanced only to 7.623 %. After further optimization of the parameters of p-crystalline silicon wafer, a maximum efficiency of 11.23 % has been achieved. Temperature dependence on the cell performance has also been studied and an efficiency of 11.38 % has been achieved at 270 K. Finally, we have demonstrated that n-type multilayer graphene can act as an excellent transparent conducting electrode.

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