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/content/aip/journal/adva/5/7/10.1063/1.4928073
2015-07-31
2016-12-08

Abstract

Employing the first-principles combined with hybrid functional calculations, the electronic and magnetic properties of GaAs doped with a N molecule are investigated in this work. We find that in GaAs(N) the N-N split is able to saturate the dangling bond of Ga atom ,form -like hybridization, and simultaneously supply an extra localized electron, leading to a magnetic ground state with a magnetic moment of ∼1. This magnetic ground state is different from previously nonmagnetic results predicted by PBE functional, which results from the self-interaction error inherent in semi-local density functional theory. Moreover, the band gap of magnetic ground state of GaAs(N) alloy decreases, which is relative to GaAs . Finally we discuss and explain why the magnetism is not discovered in previous experiments and theories.

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