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/content/aip/journal/adva/5/8/10.1063/1.4923381
1.
1.B. G. Park, J. Wunderlich, X. Martí, V. Holý, Y. Kurosaki, M. Yamada, H. Yamamoto, A. Nishide, J. Hayakawa, H. Takahashi, A. B. Shick, and T. Jungwirth, Nat. Mater. 10, 347 (2011).
http://dx.doi.org/10.1038/nmat2983
2.
2.L. Q. Liu, C.F. Pai, Y. Li, H. W. Tseng, D. C. Ralph, and R. A. Buhrman, Science 336, 555 (2012).
http://dx.doi.org/10.1126/science.1218197
3.
3.W. G. Wang, M. G. Li, S. Hageman, and C. L. Chien, Nature Mater. 11, 64 (2012).
http://dx.doi.org/10.1038/nmat3171
4.
4.I. M. Miron, K. Garello, G. Gaudin, P.J. Zermatten, M. V. Costache, S. Auffret, S. Bandiera, B. Rodmacq, A. Schuhl, and P. Gambardella, Nature 476, 189 (2011).
http://dx.doi.org/10.1038/nature10309
5.
5.H. D. Gan, H. Sato, M. Yamanouchi, S. Ikeda, K. Miura, R. Koizumi, F. Matsukura, and H. Ohno, Appl. Phys. Lett. 99, 252507 (2011).
http://dx.doi.org/10.1063/1.3671669
6.
6.A. Ozbay, A. Gokce, T. Flanagan, R. A. Stearrett, E. R. Nowak, and C. Nordman, Appl. Phys. Lett. 94, 202506 (2009).
http://dx.doi.org/10.1063/1.3139067
7.
7.J. Včelák, R. Ripka, J. Kubík, A. Plantil, and P. Kašpar, Sens. Actuators A123–124, 122 (2005).
http://dx.doi.org/10.1016/j.sna.2005.02.040
8.
8.J. F. Feng, Z. Diao, Gen Feng, E. R. Nowak, and J. M. D. Coey, Appl. Phys. Lett. 96, 052504 (2010).
http://dx.doi.org/10.1063/1.3295707
9.
9.F. G. Aliev, R. Guerrero, D. Herranz, R. Villar, F. Greullet, C. Tiusan, and M. Hehn, Appl. Phys. Lett. 91, 232504 (2007).
http://dx.doi.org/10.1063/1.2822812
10.
10.L. Ding, J. Teng, X. C. Wang, C. Feng, Y. Jiang, G. H. Yu, S. G. Wang, and R. C. C. Ward, Appl. Phys. Lett. 96, 052515 (2010).
http://dx.doi.org/10.1063/1.3304101
11.
11.J Y Bae, W C Lim, H J Kim et al., J. Appl. Phys. 99, 08T316 (2006).
12.
12.S. L. Zhang, J. Teng, J. Y. Zhang, Y. Liu, J. W. Li, G. H. Yu, and S. G. Wang, Appl. Phys. Lett. 97, 22250 (2010).
13.
13.Z. Diao, J. F. Feng, H. Kurt, G. Feng, and J. M. D. Coey, Appl. Phys. Lett. 96, 202506 (2010).
http://dx.doi.org/10.1063/1.3431620
14.
14.D. Herranz, F. Bonell, A. Gomez-Ibarlucea, S. Andrieu, F. Montaigne, R. Villar, C. Tiusan, and F. G. Aliev, Appl. Phys. Lett 96, 202501 (2010).
http://dx.doi.org/10.1063/1.3430064
15.
15.Stearrett Ryan, W G Wang, L R Shah et al., J. Appl. Phys. 107, 064502 (2010).
http://dx.doi.org/10.1063/1.3327440
16.
16.Chong-Jun Zhao, Yang Liu, Jing-Yan Zhang, Li Sun, Lei Ding, Peng Zhang, Bao-Yi Wang, Xing-Zhong Cao, and Guang-Hua Yu, Appl. Phys. Lett. 101, 072404 (2012).
http://dx.doi.org/10.1063/1.4745916
17.
17.X. Z. Cao, B. Y. Wang, R. S. Yu, C. F. Wei, D. S. Xue, and L. Wei, HEP&NP 28, 560-563 (2004).
18.
18.Y. Q. ke, K. Xia, and H. Guo, Phys. Rev. Lett. 105, 236801 (2010).
http://dx.doi.org/10.1103/PhysRevLett.105.236801
19.
19.S. J. Zinkle and C. Kinsohita, J. Nucl. Mater. 251, 200 (1997).
http://dx.doi.org/10.1016/S0022-3115(97)00224-9
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/content/aip/journal/adva/5/8/10.1063/1.4923381
2015-08-12
2016-09-27

Abstract

Low-frequency noise and magnetoresistance in sputtered-deposited Ta(5 nm)/MgO (3 nm)/NiFe(10 nm)/MgO(3 nm)/Ta(3 nm) films have been measured as a function of different annealing times at 400°C. These measurements did not change synchronously with annealing time. A significant increase in magnetoresistance is observed for short annealing times (of the order of minutes) and is correlated with a relatively small reduction in 1/f noise. In contrast, a significant reduction in 1/f noise is observed for long annealing times (of the order of hours) accompanied by a small change in magnetoresistance. After annealing for 2 hours, the 1/f noise decreases by three orders of magnitude. Transmission electron microscopy and slow positron annihilation results implicate the cause being micro-structural changes in the MgO layers and interfaces following different annealing times. The internal vacancies in the MgO layers gather into vacancy clusters to reduce the defect density after short annealing times, whereas the MgO/NiFe and the NiFe/MgO interfaces improve significantly after long annealing times with the amorphous MgO layers gradually crystallizing following the release of interfacial stress.

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