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Vibrational properties of epitaxial Bi4
films as studied by Raman spectroscopy
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Bi4Te3, as one of the phases of the binary Bi–Te system, shares many similarities with Bi2Te3, which is known as a topological insulator and thermoelectric material. We report the micro-Raman spectroscopy study of 50 nm Bi4Te3
films on Si substrates prepared by molecular beam epitaxy.
Raman spectra of Bi4Te3
films completely resolve the six predicted Raman-active phonon modes for the first time. Structural features and Raman tensors of Bi4Te3
films are introduced. According to the wavenumbers and assignments of the six eigenpeaks in the Raman spectra of Bi4Te3
films, it is found that the Raman-active phonon oscillations in Bi4Te3
films exhibit the vibrational properties of those in both Bi and Bi2Te3
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