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1.P. Chakraborty, S. S. Mahato, T. K. Maiti, M. K. Bera, C. Mahata, S. K. Samanta, A. Biswas, and C. K. Maiti, Microelectron. Eng. 86, 299 (2009).
2.R. Chau, B. Doyle, S. Datta, J. Kavalieros, and K. Zhang, Nat. Mater. 6, 810 (2007).
3.M. H. White, D. A. Adams, and J. Bu, IEEE Circuits and Devices Magazine 16, 22 (2000).
4.T. S. Chen, K. H. Wu, H. Chung, and C. H. Kao, IEEE Electron Device Lett. 25, 205 (2004).
5.H. C. You, T. H. Hsu, F. H. Ko, J. W. Huang, W. L. Yang, and T. F. Lei, IEEE. Electron Device Lett. 27, 653 (2006).
6.Y. Zhou, J. Yin, H. Xu, Y. Xia, Z. Liu, A. Li, Y. Gong, L. Pu, F. Yan, and Y. Shi, Appl. Phys. Lett. 97, 143504 (2010).
7.S. Maikap, T. Y. Wang, P. J. Tzeng, C. H. Lin, T. C. Tien, L. S. Lee, J. R. Yang, and M. J. Tsai, Appl. Phys. Lett. 90, 262901 (2007).
8.T. M. Pan and T. W. Wu, IEEE Transactions on Electron Devices 55, 1379 (2008).
9.Y. H. Lin, C. H. Chien, T. Y. Yang, and T. F. Lei, J. Electrochem. Soc. 154, H619 (2007).
10.C. Lu, J. Nanosci. Nanotechnol. 12, 7604 (2012).
11.C. J. Gong, Q. N. Yin, X. Ou, J. Yin, B. Xu, Y. D. Xia, A. D. Li, and Z. G. Liu, Appl. Phys. Lett. 105, 123504 (2014).
12.K. Jiang, X. Ou, X. X. Lan, J. Yin, B. Xu, Y. D. Xia, A. D. Li, and Z. G. Liu, Appl. Phys. Lett. 104, 263506 (2014).
13.J. X. Lu, C. J. Gong, X. Ou, W. Lu, J. Yin, B. Xu, Y. D. Xia, Z. G. Liu, and A. D. Li, AIP Advances 4, 117110 (2014).
14.H. Zhu, H. Yuan, H. Li, C. Richter, O. Kirillov, D. Ioannou, and Q. Li, Nanotechnology, IEEE Transactions on 12, 1151 (2013).
15.R. I. Hegde, D. H. Triyoso, S. B. Samavedam, and B. E. White, Jr., J. Appl. Phys. 101, 074113 (2007).
16.D. H. Triyoso, R. I. Hegde, J. Jiang, J. K. Schaeffer, and M. V. Raymond, IEEE Electron Device Letter 29, 57 (2008).
17.T. S. Boscke, P. Y. Hung, P. D. Kirsch, M. A. Quevedo-Lopez, and R. Ramirez-bon, Appl. Phys. Lett. 95, 052904 (2009).
18.D. Spassov and E. Atanassova, Microelectronic Engineering 85, 214 (2008).
19.N. V. Nguyen, C. A. Richter, Y. J. Cho, G. B. Alers, and L. A. Stirling, Appl. Phys. Lett. 77, 3012 (2000).
20.C. B. Samantary, H. Sim, and H. Hwang, Appl. Sur. Sci. 242, 121 (2005).
21.E. A. Kraut, R. W. Grant, J. R. Waldrop, and S. P. Kowalczyk, Phys. Rev. Lett. 44, 1620 (1980).
22.S. A. Chambers, Y. Liang, Z. Yu. R. Droopad, J. Ramdani, and K. Eisenbeiser, Appl. Phys. Lett. 77, 1662 (2000).
23.H. Y. Yu, M. F. Li, and D. L. Kwong, Thin Solid Films 462, 110 (2004).
24.Y. P. Gong, A. D. Li, X. F. Li, H. Li, H. F. Zhai, and D. Wu, Semicond. Sci. Technol. 25, 055012 (2010).

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The charge-trapping memory (CTM) structures Pt/AlO/TaAlO/AlO/p-Si and Pt/AlO/ZrAlO/AlO/p-Si were fabricated by using rf-sputtering and atomic layer deposition techniques, in which the potentials at the bottom of the conduction band (PBCB) of high-k composites TaAlO and ZrAlO were specially designed. With a lower PBCB difference between TaAlO and p-Si than that between ZrAlO and p-Si, TaAlO CTM device shows a better charge-trapping performance. A density of trapped charges 2.88 × 1013/cm2 at an applied voltage of ±7 V was obtained for TaAlO CTM device, and it could keep about 60% of initially trapped charges after 10 years. It was suggested that the PBCB difference between high-k composite and p-Si dominates their charge-trapping behaviors.


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