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/content/aip/journal/adva/5/8/10.1063/1.4929521
2015-08-20
2016-12-05

Abstract

The charge-trapping memory (CTM) structures Pt/AlO/TaAlO/AlO/p-Si and Pt/AlO/ZrAlO/AlO/p-Si were fabricated by using rf-sputtering and atomic layer deposition techniques, in which the potentials at the bottom of the conduction band (PBCB) of high-k composites TaAlO and ZrAlO were specially designed. With a lower PBCB difference between TaAlO and p-Si than that between ZrAlO and p-Si, TaAlO CTM device shows a better charge-trapping performance. A density of trapped charges 2.88 × 1013/cm2 at an applied voltage of ±7 V was obtained for TaAlO CTM device, and it could keep about 60% of initially trapped charges after 10 years. It was suggested that the PBCB difference between high-k composite and p-Si dominates their charge-trapping behaviors.

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