No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
HgCdTe e-avalanche photodiode detector arrays
7.S. Ghosh, S. Mallick, K. Banerjee, C. Grein, S. Velicu, J. Zhao, D. Silversmith, J. B. Rodriguez, E. Plis, and S. Krishna, J. Electron. Mater. 37(12), 1764 (2008).
11.G.M. Williams, D.A. Ramirez, M. Hayat, and A.S. Huntington, IEEE Trans. Electron Dev. 1(4), 99 (2013).
17.J. Beck, R. Scritchfield, B. Sullivan, J. Teherani, C. F. Wan, M. Kinch, M. Ohlson, M. Skokan, L. Wood, P. Mitra, M. Goodwin, and J. Robinson, J. Electron. Mater. 38(8), 1579 (2009).
22.S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (John Wiley and Sons, Inc., 2001), pp. 74–120.
25.M. A. Kinch, Fundamentals of Infrared Detector Materials (SPIE Press, Bellingham, USA, 2007), pp. 61–133.
26.P. Capper and J. Garland, Mercury Cadmium Telluride Growth, Properties and Application (John Wiley and Sons Ltd., U.K, 2011), pp. 493–511.
Article metrics loading...
Initial results on the MWIR e-APD detector arrays with 30 μm pitch fabricated on LPE grown compositionally graded p-HgCdTe epilayers are presented. High dynamic resistance times active area (R0A) product 2 × 106 Ω-cm2, low dark current density 4 nA/cm2 and high gain 5500 at -8 V were achieved in the n+-υ-p+
HgCdTe e-APD at 80 K. LPE based HgCdTe e-APD development makes this technology amenable for adoption in the foundries established for the conventional HgCdTe photovoltaic detector arrays without any additional investment.
Full text loading...
Most read this month