Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/5/9/10.1063/1.4931038
1.
1.C. L. Kane and E. J. Mele, “Z2 topological order and the quantum spin hall effect,” Phys. Rev. Lett. 95, 146802 (2005).
http://dx.doi.org/10.1103/PhysRevLett.95.146802
2.
2.L. Fu, C. L. Kane, and E. J. Mele, “Topological insulators in three dimensions,” Phys. Rev. Lett. 98, 106803 (2007).
http://dx.doi.org/10.1103/PhysRevLett.98.106803
3.
3.H. Zhang, C.-X. Liu, X.-L. Qi, X. Dai, Z. Fang, and S.-C. Zhang, “Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface,” Nat Phys 5, 438442 (2009).
http://dx.doi.org/10.1038/nphys1270
4.
4.L. Fu and C. L. Kane, “Superconducting proximity effect and Majorana fermions at the surface of a topological insulator,” Phys. Rev. Lett. 100, 096407 (2008).
http://dx.doi.org/10.1103/PhysRevLett.100.096407
5.
5.K. Hoefer, C. Becker, D. Rata, J. Swanson, P. Thalmeier, and L. H. Tjeng, “Intrinsic conduction through topological surface states of insulating Bi2Te3 epitaxial thin films,” Proceedings of the National Academy of Sciences 111, 1497914984 (2014).
http://dx.doi.org/10.1073/pnas.1410591111
6.
6.D. Kong, J. J. Cha, K. Lai, H. Peng, J. G. Analytis, S. Meister, Y. Chen, H.-J. Zhang, I. R. Fisher, Z.-X. Shen, and Y. Cui, “Rapid surface oxidation as a source of surface degradation factor for Bi2Se3,” ACS Nano 5, 46984703 (2011).
http://dx.doi.org/10.1021/nn200556h
7.
7.P. Ngabonziza, R. Heimbuch, R. Klaassen, M. Stehno, M. Snelder, A. Solmaz, S. Ramankutty, E. van Heumen, G. Koster, and M. Golden, “In-situ spectroscopy of intrinsic Bi2Te3topological insulator thin films and impact of extrinsic defects,” arXiv preprint arXiv:1502.01185(2015).
8.
8.S. E. Harrison, B. Zhou, Y. Huo, A. Pushp, A. J. Kellock, S. S. P. Parkin, J. S. Harris, Y. Chen, and T. Hesjedal, “Preparation of layered thin film samples for angle-resolved photoemission spectroscopy,” Applied Physics Letters 105, 121608 (2014).
http://dx.doi.org/10.1063/1.4896632
9.
9.K. Virwani, S. E. Harrison, A. Pushp, T. Topuria, E. Delenia, P. Rice, A. Kellock, L. Collins-McIntyre, J. Harris, T. Hesjedal, and S. Parkin, “Controlled removal of amorphous Se capping layer from a topological insulator,” Applied Physics Letters 105, 241605 (2014).
http://dx.doi.org/10.1063/1.4904803
10.
10.See supplementary material at http://dx.doi.org/10.1063/1.4931038 for additional LEED pattern at 26 eV, RHEED images after the de-capping process and XPS core level spectra of a Bi2Te3 film in pristine conditions and after de-capping of Te.[Supplementary Material]
11.
11.S. Huefner, Photoelectron Spectroscopy: Principles and Applications, Advanced Texts in Physics 3rd ed. (Springer-Verlag, Berlin Heidelberg, 2003), p. 662.
12.
12.J. Moulder and J. Chastain, Handbook of X-ray Photoelectron Spectroscopy: A Reference Book of Standard Spectra for Identification and Interpretation of XPS Data (Physical Electronics Division, Perkin-Elmer Corporation, 1992).
13.
13.J. Park, Y.-A. Soh, G. Aeppli, X. Feng, Y. Ou, K. He, and Q.-K. Xue, “Crystallinity of tellurium capping and epitaxy of ferromagnetic topological insulator films on SrTiO3,” Sci. Rep. 5 (2015).
http://dx.doi.org/10.1038/srep11595
14.
14.L. Tjeng, R. Hesper, A. Heessels, A. Heeres, H. Jonkman, and G. Sawatzky, “Development of the electronic structure in a K-doped C60 monolayer on a Ag(1 1 1) surface,” Solid State Communications 103, 3135 (1997).
http://dx.doi.org/10.1016/S0038-1098(97)00126-9
15.
15.R. Hesper, L. H. Tjeng, and G. A. Sawatzky, “Strongly reduced band gap in a correlated insulator in close proximity to a metal,” EPL (Europhysics Letters) 40, 177– (1997).
http://dx.doi.org/10.1209/epl/i1997-00442-2
16.
16.R. Musket, “Studies of clean and oxidized tellurium surfaces,” Surface Science 74, 423435 (1978).
http://dx.doi.org/10.1016/0039-6028(78)90037-7
17.
17.W.-Y. Lee and R. H. Geiss, “Degradation of thin tellurium films,” Journal of Applied Physics 54, 13511357 (1983).
http://dx.doi.org/10.1063/1.332156
http://aip.metastore.ingenta.com/content/aip/journal/adva/5/9/10.1063/1.4931038
Loading
/content/aip/journal/adva/5/9/10.1063/1.4931038
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/5/9/10.1063/1.4931038
2015-09-11
2016-12-09

Abstract

We have identified epitaxially grown elemental Te as a capping material that is suited to protect the topological surface states of intrinsically insulating BiTe. By using angle-resolved photoemission, we were able to show that the Te overlayer leaves the dispersive bands of the surface states intact and that it does not alter the chemical potential of the BiTe thin film. From four-point contact measurements, we observed that the conductivity of the capped film is still mainly determined by the metallic surface states and that the contribution of the capping layer is minor. Moreover, the Te overlayer can be annealed away in vacuum to produce a clean BiTe surface in its pristine state even after the exposure of the capped film to air. Our findings will facilitate well-defined and reliable experiments on the properties of BiTe surface states with nontrivial topology.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/5/9/1.4931038.html;jsessionid=fSRlZuDQ84WKddbfjNrZhtgZ.x-aip-live-03?itemId=/content/aip/journal/adva/5/9/10.1063/1.4931038&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/5/9/10.1063/1.4931038&pageURL=http://scitation.aip.org/content/aip/journal/adva/5/9/10.1063/1.4931038'
Right1,Right2,Right3,