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Annealing effects on recombinative activity of nickel at direct silicon bonded interface
3.T. Buonassisi, A. A. Istratov, M. D. Pickett, M. Heuer, J. P. Kalejs, G. Hahn, M. A. Marcus, B. Lai, Z. Cai, S. M. Heald, T. F. Ciszek, R. F. Clark, D. W. Cunningham, A. M. Gabor, R. Jonczyk, S. Narayanan, E. Sauar, and E. R. Weber, Prog. Photovoltaics 14, 513 (2006).
8.T. Jiang, X. Yu, X. Gu, G. Rozgonyi, and D. Yang, Phys. Status Solidi A 210, 1828 (2013).
14.D. K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, New York, 2006), pp. 259–267.
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By performing capacitance transient analyses, the recombination activity at a (110)/(100) direct silicon bonded (DSB)
interface contaminated with nickel diffused at different temperatures, as a model of grain boundaries in multicrystalline silicon, was studied. The trap level depth from the valence band, trap density of states, and hole capture cross section peaked at an annealing temperature of 300 °C. At temperatures ⩾400 °C, the hole capture cross section increased with temperature, but the density of states remained unchanged. Further, synchrotron-based X-ray analyses, microprobe X-ray fluorescence (μ-XRF), and X-ray absorption near edge structure
(XANES) analyses were performed. The analysis results indicated that the chemical phase after the sample was annealed at 200 °C was a mixture of NiO and NiSi2.
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