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Large enhancement of Blocking temperature by control of interfacial structures in Pt/NiFe/IrMn/MgO/Pt multilayers
, D. Kriegner
, V. Holý
, K. Olejník
, V. Novák
, M. Yamada
, K. Miura
, S. Ogawa
, H. Takahashi
, T. Jungwirth
, and J. Wunderlich
, B. Howells
, J. Zelezny
, C. Andrews
, V. Hills
, R. P. Campion
, V. Novak
, F. Freimuth
, Y. Mokrousov
, A. W. Rushforth
, K. W. Edmonds
, B. L. Gallagher
, and T. Jungwirth
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The Blocking temperature (T
B) of Pt/NiFe/IrMn/MgO/Pt multilayers was greatly enhanced from far below room temperature (RT) to above RT by inserting 1 nm thick Mg layer at IrMn/MgO interface. Furthermore, the exchange bias field (H
eb) was increased as well by the control of interfacial structures. The evidence for a significant fraction of Mn-O bonding at IrMn/MgO interface without Mg insertion layer was provided by X-ray photoelectron spectroscopy. The bonding between Mn and O can decrease the antiferromagnetism of IrMn film, leading to lower value of T
B in Pt/NiFe/IrMn/MgO/Pt multilayers. Ultrathin Mg film inserted at IrMn/MgO interface acting as an oxygen sinking layer can suppress the oxidation reactions between Mn and O and reduce the formation of Mn-O bonding greatly. The oxidation suppression results in the recovery of the antiferromagnetism of IrMn film, which can enhance T
B and H
eb. Furthermore, the high resolution transmission electron microscopy demonstrates that the Mg insertion layer can efficiently promote a high-quality MgO (200) texture. This study will enhance the understanding of physics in antiferromagnet-based
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