Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/5/9/10.1063/1.4931998
1.
1.Z. Hu, M. Tian, B. Nysten, and A. Jonas, Nat. Mater. 8, 62 (2009).
http://dx.doi.org/10.1038/nmat2339
2.
2.R. Naber, K. Asadi, P. Blom, D. de Leeuw, and B. de Boer, Adv. Mater. 22, 933 (2010).
http://dx.doi.org/10.1002/adma.200900759
3.
3.K. Asadi, D. de Leeuw, B. De Boer, and P. Blom, Nat. Mater. 7, 547 (2008).
http://dx.doi.org/10.1038/nmat2207
4.
4.T. P. Ma and J. Han, IEEE Electron Device Lett. 23, 386 (2002).
http://dx.doi.org/10.1109/LED.2002.1015207
5.
5.T. Reece, A. Gerber, H. Kohlstedt, and S. Ducharme, J. Appl. Phys. 108, 024109 (2010).
http://dx.doi.org/10.1063/1.3452331
6.
6.R. Kalbitz, P. Frübing, R. Gerhard, and D. Taylor, Appl. Phys. Lett. 98, 033303 (2011).
http://dx.doi.org/10.1063/1.3543632
7.
7.R. Kalbitz, R. Gerhard, and D. Taylor, Org. Electron. 13, 875 (2012).
http://dx.doi.org/10.1016/j.orgel.2012.01.034
8.
8.B. Kam, X. Li, C. Cristoferi, E. Smits, A. Mityashin, S. Schols, J. Genoe, G. Gelinck, and P. Heremans, Appl. Phys. Lett. 101, 033304 (2012).
http://dx.doi.org/10.1063/1.4737176
9.
9.K. Asadi, J. Wildeman, P. Blom, and D. de Leeuw, IEEE Trans. Electron Devices 57, 3466 (2010).
http://dx.doi.org/10.1109/TED.2010.2072958
10.
10.R. Naber, J. Massolt, M. Spijkman, K. Asadi, P. Blom, and D. de Leeuw, Appl. Phys. Lett. 90, 113509 (2007).
http://dx.doi.org/10.1063/1.2713856
11.
11.K. Asadi, P. Blom, and D. de Leeuw, Appl. Phys. Lett. 99, 053306 (2011).
http://dx.doi.org/10.1063/1.3621857
12.
12.S. Kalinin, A. Rar, and S. Jesse, IEEE Trans. Ultrason. Ferroelectr. Freq. Control 53, 2226 (2006).
http://dx.doi.org/10.1109/TUFFC.2006.169
13.
13.C. Lichtensteiger, S. Fernandez-Pena, C. Weymann, P. Zubko, and J. Triscone, Nano Lett. 14, 4205 (2014).
http://dx.doi.org/10.1021/nl404734z
14.
14.J. Brondijk, K. Asadi, P. Blom, and D. de Leeuw, J. Polym. Sci. B-Polym. Phys. 50, 47 (2012).
http://dx.doi.org/10.1002/polb.22363
15.
15.T. Nakajima, M. Nakamura, T. Furukawa, and S. Okamura, Jap. J. Appl. Phys. 49, 09MC12 (2010).
16.
16.J. Li, D. Taguchi, W. OuYang, T. Manaka, and M. Iwamoto, Appl. Phys. Lett. 99, 063302 (2011).
http://dx.doi.org/10.1063/1.3624477
17.
17.T. Furukawa, T. Nakajima, and Y. Takahashi, IEEE Trns. Dielectr. Electr. Insul. 13, 1120 (2006).
18.
18.M. Debucquoy, M. Rockelé, J. Genoe, G. Gelinck, and P. Heremans, Org. Electron. 10, 1252 (2009).
http://dx.doi.org/10.1016/j.orgel.2009.07.005
19.
19.I. Torres, D. Taylor, and E. Itoh, Appl. Phys. Lett. 85, 314 (2004).
http://dx.doi.org/10.1063/1.1769081
20.
20.T. Furukawa, S. Kanai, A. Okada, Y. Takahashi, and R. Yamamoto, J. Appl. Phys. 105, 061636 (2009).
http://dx.doi.org/10.1063/1.3055411
21.
21.S. Rajwade, K. Auluck, J. Phelps, K. Lyon, J. Shaw, and E. Kan, IEEE Trans. Electron Devices 59, 441 (2012).
http://dx.doi.org/10.1109/TED.2011.2175396
22.
22.S. Rajwade, K. Auluck, J. Phelps, K. Lyon, J. Shaw, and E. Kan, IEEE Trans. Electron Devices 59, 450 (2012).
http://dx.doi.org/10.1109/TED.2011.2175397
23.
23.T. Ng, B. Russo, and A. Arias, J. Appl. Phys. 106, 094504 (2009).
http://dx.doi.org/10.1063/1.3253758
24.
24.G. Zhu, X. Luo, J. Zhang, and X. Yan, J. Appl. Phys. 106, 074113 (2009).
http://dx.doi.org/10.1063/1.3240200
25.
25.F. Ledoyen, P. Andry, A. Rambo, and J. Lauzon, J. Appl. Phys. 72, 5756 (1992).
http://dx.doi.org/10.1063/1.351930
26.
26.J. Koo, S. Kang, I. You, and K. Suh, Solid-State Electron. 53, 621 (2009).
http://dx.doi.org/10.1016/j.sse.2009.04.005
27.
27.H. Choi, W. Lee, and K. Cho, Adv. Funct. Mater. 22, 4833 (2012).
http://dx.doi.org/10.1002/adfm.201201084
28.
28.P. Nayak, R. Rosenberg, L. Barnea-Nehoshtan, and D. Cahen, Org. Electron. 14, 966 (2013).
http://dx.doi.org/10.1016/j.orgel.2013.01.020
http://aip.metastore.ingenta.com/content/aip/journal/adva/5/9/10.1063/1.4931998
Loading
/content/aip/journal/adva/5/9/10.1063/1.4931998
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/5/9/10.1063/1.4931998
2015-09-24
2016-12-05

Abstract

Ferroelectric polymer-based memory devices have attracted much attention due to their potential in low-cost flexible memories. However, bad retention property of recorded logic states limited their applications. Though mechanisms of retention degradation in ferroelectric memories are complicated and still an open question, depolarization in ferroelectric polymer layer was regarded as the main influencing factor. Here we reported our piezoresponse force microscopy (PFM) study of retention property of polarization states on various ferroelectric polymer based structures. PFM results indicated that, as for ferroelectric/semiconductor structure and ferroelectric/insulator/semiconductor structure with thin insulating layer, both positive and negative polarization states could retain for a relatively long time. Mechanisms of good retention of polarization states were discussed. The discrepancy in bad retention of logic states and good polarization retention of ferroelectric layer was also analyzed.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/5/9/1.4931998.html;jsessionid=ZFP7ZNs4T_UWeXvTa17S-xRr.x-aip-live-06?itemId=/content/aip/journal/adva/5/9/10.1063/1.4931998&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/5/9/10.1063/1.4931998&pageURL=http://scitation.aip.org/content/aip/journal/adva/5/9/10.1063/1.4931998'
Right1,Right2,Right3,