Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1.C. Rocke, S. Zimmermann, A. Wixforth, J. P. Kotthaus, G. Böhm, and G. Weimann, Phys. Rev. Lett. 78, 4099 (1997).
2.P. V. Santos, F. Alsina, J. A. H. Stotz, R. Hey, S. Eshlaghi, and A. D. Wieck, Phys. Rev. B 69, 155318 (2004).
3.S. Völk, F. Knall, F. J. R. Schülein, T. A. Truong, H. Kim, P. M. Petroff, A. Wixforth, and H. J. Krenner, Appl. Phys. Lett. 98, 023109 (2011).
4.F. Alsina, P. V. Santos, H.-P. Schönherr, W. Seidel, K. H. Ploog, and R. Nötzel, Phys. Rev. B 66, 165330 (2002).
5.J. Ebbecke, S. Maisch, A. Wixforth, R. Calarco, R. Meijers, M. Marso, and H. Lüth, Nanotechnology 19, 275708 (2008).
6.J. B. Kinzel, D. Rudolph, M. Bichler, G. Abstreiter, J. J. Finley, G. Koblmüller, A. Wixforth, and H. J. Krenner, Nano Lett. 11, 1512 (2011).
7.C. Wiele, F. Haake, C. Rocke, and A. Wixforth, Phys. Rev. A 58, R2680 (1998).
8.J. R. Gell, M. B. Ward, R. J. Young, R. M. Stevenson, P. Atkinson, D. Anderson, G. A. C. Jones, D. A. Ritchie, and A. J. Shields, Appl. Phys. Lett. 93, 081115 (2008).
9.O. D. D. Couto, S. Lazić, F. Iikawa, J. A. H. Stotz, U. Jahn, R. Hey, and P. V. Santos, Nat. Photonics 3, 645 (2009).
10.S. Völk, F. J. R. Schülein, F. Knall, D. Reuter, A. D. Wieck, T. A. Truong, H. Kim, P. M. Petroff, A. Wixforth, and H. J. Krenner, Nano Lett. 10, 3399 (2010).
11.J. Pustiowski, K. Müller, M. Bichler, G. Koblmüller, J. J. Finley, A. Wixforth, and H. J. Krenner, Appl. Phys. Lett. 106, 013107 (2015).
12.C. Brüggemann, A. V. Akimov, A. V. Scherbakov, M. Bombeck, C. Schneider, S. Höfling, A. Forchel, D. R. Yakovlev, and M. Bayer, Nat. Photonics 6, 30 (2012).
13.R. P. G. McNeil, M. Kataoka, C. J. B. Ford, C. H. W. Barnes, D. Anderson, G. A. C. Jones, I. Farrer, and D. A. Ritchie, Nature 477, 439 (2011).
14.M. J. A. Schütz, E. M. Kessler, G. Giedke, L. M. K. Vandersypen, M. D. Lukin, and J. I. Cirac, arXiv:1504.05127v1 [quant-ph] (2015).
15.F. Ding, R. Singh, J. D. Plumhof, T. Zander, V. Křápek, Y. H. Chen, M. Benyoucef, V. Zwiller, K. Dörr, G. Bester, A. Rastelli, and O. G. Schmidt, Phys. Rev. Lett. 104, 067405 (2010).
16.Y. Takagaki, P. V. Santos, E. Wiebicke, O. Brandt, H. –P. Schönherr, and K. H. Ploog, Appl. Phys. Lett. 81, 2538 (2002).
17.J. Camacho, P. V. Santos, F. Alsina, M. Ramsteiner, K. H. Ploog, A. Cantarero, H. Obloh, and J. Wagner, J. Appl. Phys. 94, 1892 (2003).
18.S. Lazić, E. Chernysheva, Ž. Gačević, N. García-Lepetit, H. P. van der Meulen, M. Müller, F. Bertram, P. Veit, J. Christen, A. Torres-Pardo, J. M. González Calbet, E. Calleja, and J. M. Calleja, Proc. SPIE Gallium Nitride Materials and Devices X 9363, 93630U (2015).
19.H. Sekiguchi, K. Kishino, and A. Kikuchi, phys. stat. sol. (c) 10, 2374 (2010).
20.M. J. Holmes, K. Choi, S. Kako, M. Arita, and Y. Arakawa, Nano Lett. 14, 982 (2014).
21.S. Albert, A. Bengoechea-Encabo, P. Lefebvre, F. Barbagini, M. A. Sanchez-Garcia, E. Calleja, U. Jahn, and A. Trampert, Appl. Phys. Lett. 100, 231906 (2012).
22.K. Yamanouchi, C. H. S. Lee, K. Yamamoto, T. Meguro, and H. Odagawa, in IEEE Ultrason. Symp. (IEEE, New York, 1992), p. 139.
23.A. Hernández-Mínguez, M. Möller, S. Breuer, C. Pfüller, C. Somaschini, S. Lazić, O. Brandt, A. García-Cristóbal, M. M. de Lima, Jr., A. Cantarero, L. Geelhaar, H. Riechert, and P. V. Santos, Nano Lett. 12, 252 (2012).
24.M. Weiß, J. B. Kinzel, F. J. R. Schülein, M. Heigl, D. Rudolph, S. Morkötter, M. Döblinger, M. Bichler, G. Abstreiter, J. J. Finley, G. Koblmüller, A. Wixforth, and H. J. Krenner, Nano Lett. 14, 2256 (2014).
25.M. A. Reshchikov and H. Morkoç, J. Appl. Phys. 97, 061301 (2005).
26.R. Bardoux, T. Guillet, B. Gil, P. Lefebvre, T. Bretagnon, T. Taliercio, S. Rousset, and F. Semond, Appl. Phys. Lett. 77, 235315 (2008).
27.S. Amloy, K. F. Karlsson, M. O. Eriksson, J. Palisaitis, P. O. Å Persson, Y. T. Chen, K. H. Chen, H. C. Hsu, C. L. Hsiao, L. C. Chen, and P. O. Holtz, Nanotechnology 25, 495702 (2014).
28.K. Sebdal, J. Kalden, S. Herlufsen, H. Lohmeyer, C. Tessarek, T. Yamaguchi, S. Figge, D. Hommel, and J. Gutowski, phys. stat. sol. (c) 4, 872 (2009).
29.T. Nakaoka, S. Kako, and Y. Arakawa, Physica E 32, 148 (2006).
30.A. F. Jarjour, R. A. Oliver, A. Tahraoui, M. J. Kappers, C. J. Humphreys, and R. A. Taylor, Phys. Rev. Lett. 99, 197403 (2007).
31.M. M. de Lima, Jr. and P. V. Santos, Rep. Prog. Phys. 68, 1639 (2005).
32.T. Nakaoka, S. Kako, and Y. Arakawa, Phys. Rev. B 73, 121205 (2006).
33.S. P. Łepkowski, I. Gorczyca, K. Stefańska-Skrobas, N. E. Christensen, and A. Svane, Phys, Rev. B 88, 081202R (2013).
34.D. Simeonov, A. Dussaigne, R. Butté, and N. Grandjean, Phys. Rev. B 77, 075306 (2008).
35.S. Amloy, K. H. Yu, K. F. Karlsson, R. Farivar, T. G. Andersson, and P. O. Holtz, Appl. Phys. Lett. 99, 251903 (2011).
36.M. Weiß, F. J. R. Schülein, J. B. Kinzel, M. Heigl, D. Rudolph, M. Bichler, G. Abstreiter, J. J. Finley, A. Wixforth, G. Koblmüller, and H. J. Krenner, J. Phys. D: Appl. Phys. 47, 394011 (2014).

Data & Media loading...


Article metrics loading...



The optical emission of InGaN quantum dots embedded in GaN nanowires is dynamically controlled by a surface acoustic wave (SAW). The emission energy of both the exciton and biexciton lines is modulated over a 1.5 meV range at ∼330 MHz. A small but systematic difference in the exciton and biexciton spectral modulation reveals a linear change of the biexciton binding energy with the SAW amplitude. The present results are relevant for the dynamic control of individual single photon emitters based on nitride semiconductors.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd