No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Modulation of interlayer exchange coupling strength in magnetic tunnel junctions via strain effect
19.P. W. T. Pong and W. F. Egelhoff, J. Appl. Phys. 105, 07C915 (2009).
24.G. Yu, Z. Wang, M. Abolfath-Beygi, C. He, X. Li, K. L. Wong, P. Nordeen, H. Wu, G. P. Carman, X. Han, I. A. Alhomoudi, P. K. Amiri, and K. L. Wang, Appl. Phys. Lett. 106, 072402 (2015).
26.SAS Institute Inc., JMP® 10 Basic analysis and graphing (SAS Institute Inc, Cary, NC, 2012).
Article metrics loading...
Interlayer exchange coupling of two ferromagnetic electrodes separated by a thin MgO tunnel barrier is investigated using magneto-optical Kerr effect. We find that the coupling field can be reduced by more than 40% as the thickness of a top Ta capping layer increases from 0.5 to 1.2 nm. In contrast, a similar film stack with an additional 3 nm Ru capping layer displays no such dependence on Ta thickness. Transmission electron microscopy study shows that the oxidation of the exposed Ta capping layer induces changes in the crystalline structures of the underlying films, giving rise to the observed reduction of the interlayer coupling field.
Full text loading...
Most read this month