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/content/aip/journal/adva/6/1/10.1063/1.4939817
2016-01-07
2016-12-07

Abstract

Cu is widely used in the back contact formation of CdTethin filmsolar cells. However, Cu is easily to diffuse from the back contact into the CdTe absorber layer and even to the celljunction interface CdS/CdTe. This phenomenon is generally believed to be the main factor affecting the CdTesolar cell stability. In this study Cu was intentionally doped in CdSthin film to study its effect on the microstructural, optical and electrical properties of the CdS material. Upon Cudoping, the V and the surface-state-related photoluminescence emissions were dramatically decreased/quenched. The presence of Cu atom hindered the recrystallization/coalescence of the nano-sized grains in the as-deposited CdSfilm during the air and the CdCl annealing. CdTethin filmsolar cell fabricated with Cu-doped CdS window layers demonstrated much decreased fill factor, which was induced by the increased space-charge recombination near the p-n junction and the worsened junction crystalline quality. Temperature dependent current-voltage curve measurement indicated that the dopedCu in the CdS window layer was not stable at both room and higher temperatures.

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