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/content/aip/journal/adva/6/1/10.1063/1.4939818
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/content/aip/journal/adva/6/1/10.1063/1.4939818
2016-01-07
2016-12-05

Abstract

The temperature dependence of the capacitance of (111)-oriented (0.90–)BaTiO-0.10Bi(MgTi)O-BiFeOsolid solutionfilms is investigated. These films are prepared on (111)SrRuO/(111)Pt/TiO/SiO/(100)Si substrates by the chemical solution deposition technique. All the films have perovskite structures and the crystal symmetry at room temperature varies with increasing ratio, from pseudocubic when = 0–0.30 to rhombohedral when = 0.50–0.90. The pseudocubic phase shows a high relative dielectric constant (ε) (ranging between 400 and 560 at room temperature and an operating frequency of 100 kHz) and a low temperature dependence of capacitance up to 400°C, while maintaining a dielectric loss (tan δ) value of less than 0.2 at 100 kHz. In contrast, ε for the rhombohedral phase increases monotonically with increasing temperature up to 250°C, and increasingly high tan δ values are recorded at higher temperatures. These results indicate that pseudocubic (0.90–)BaTiO-0.10Bi(MgTi)O-BiFeOsolid solutionfilms with (111) orientation are suitable candidates for high-temperature capacitor applications.

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