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/content/aip/journal/adva/6/1/10.1063/1.4940763
2016-01-22
2016-12-09

Abstract

We report a detailed investigation on temperature-dependentRaman scattering of -(AlGa)Othin films with different Al content (0-0.72) under the temperature range of 77-300 K. The temperature-dependent Raman shifts and linewidths of the phonon modes were obtained by employing Lorentz fitting. The linewidths broadening of phonon modes with the temperature can be well explained by a model involving the effects of thermal expansion, lattice-mismatch-induced strain, and decay of optical phonon into two and three phonons. It is clearly demonstrated dependence of the linewidths and decay process on the Al content in -(AlGa)Othin films, which can provide an experimental basis for realization of (AlGa)O-based optoelectronic device applications.

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