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SnS thin films prepared by H2
S-free process and its p
-type thin film transistor
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Polycrystalline SnSthin films were fabricated by a H2S-free process combing pulsed laser deposition at room temperature and post-deposition thermal annealing in Ar. Thermal annealing improved the crystalline quality of the SnSfilms and the best films were obtained by 400 °C annealing. The obtained SnSfilms exhibited p-type conduction with the highest Hall mobility of 28 cm2/(V ⋅ s) and the carrier densities of 1.5 × 1015 – 1.8 × 1016 cm−3. The SnSTFT exhibited p-type operation with a field effect mobility and an on-off drain current ratio of 0.4 cm2/(V ⋅ s) and 20, respectively.
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