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/content/aip/journal/adva/6/1/10.1063/1.4941042
2016-01-26
2016-12-11

Abstract

We report the design, fabrication, and characterization of broadband terahertz emitters based on the semiconductor-metal transition in thin film VO (vanadium dioxide). With the appropriate geometry, picosecond electrical pulses are generated by illuminating 120 nm thick VO with 280 fs pulses from a femtosecond laser. These ultrafast electrical pulses are used to drive a simple dipole antenna,generating broadband terahertz radiation.

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