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Investigation of switching region in superlattice phase change memories
N. Takaura, T. Ohyanagi, M. Tai, M. Kinoshita, K. Akita, T. Morikawa, H. Shirakawa, M. Araidai, K. Shiraishi, Y. Saito, and J. Tominaga, IEDM Tech. Dig. 2014, 29.2.
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M. Tai, T. Ohyanagi, M. Kinoshita, T. Morikawa, K. Akita, S. Kato, and N. Takaura, VLSI Tech. Dig. 2014, 22.4.
N. Takaura, T. Ohyanagi, M. Kitamura, M. Tai, M. Kinoshita, K. Akita, T. Morikawa, S. Kato, M. Araidai, K. Kamiya, T. Yamamoto, and K. Shiraishi, Symposium on VLSI Technology T130 (2013).
D. Bang, H. Awano, J. Tominaga, A. V. Kolobov, P. Fons, Y. Saito, K. Makino, T. Nakano, M. Hase, Y. Takagaki, A. Giussani, R. Calarco, and S. Murakami, Scientific Report 4, 5727 (2014).
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private communication with Dr. Tominaga of AIST, Japan.
S. Loubriat, D. Muyard, F. Fillot, A. Roule, M. Veillerot, J. P. Barnes, P. Gergaud, L. Vandroux, M. Verdier, and S. Maitrejean, Microelectric Engineering 88, 817 (2011).
J. Tominaga, R. E. Simpson, P. Fons, and A. V. Kolobov, Proc. of EPCOS 2010, pp.54 (2010).
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We investigated superlattice phase change memories (PCMs) to clarify which regions were responsible for switching. We observed atomic structures in a superlattice PCM film with a stack of GeTe / Sb2Te3 layers using atomically resolved EDX maps, and we found an intermixed region with three atom species of the Ge, Sb and Te around the top GeTe layer under the top electrode. We also found that a device with a GeTe layer on an Sb2Te3 layer without superlattice structure had the same switching characteristics as a device with a superlattice PCM, that had the same top GeTe layer. We developed and fabricated a modified superlattice PCM that attained ultra low Reset / Set currents under 60 .
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