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/content/aip/journal/adva/6/2/10.1063/1.4941702
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/content/aip/journal/adva/6/2/10.1063/1.4941702
2016-02-04
2016-09-29

Abstract

The lateral gas phase diffusion length of boron atoms, L, along silicon and boron surfaces during chemical vapor deposition(CVD) using diborane (BH) is reported. The value of L is critical for reliable and uniform boron layer coverage. The presented information was obtained experimentally and confirmed analytically in the borondepositiontemperature range from 700 °C down to 400 °C. For this temperature range the local loading effect of the borondeposition is investigated on the micro scale. A L = 2.2 mm was determined for borondeposition at 700 °C, while a L of less than 1 mm was observed at temperatures lower than 500 °C.

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