Skip to main content
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1.L. Chua, “Memristor-the missing circuit element,” Circuit Theory, IEEE Transactions on 18, 507519 (1971).
2.J. J. Yang, M. D. Pickett, X. Li, D. A. Ohlberg, D. R. Stewart, and R. S. Williams, “Memristive switching mechanism for metal/oxide/metal nanodevices,” Nature nanotechnology 3, 429433 (2008).
3.D. B. Strukov, J. L. Borghetti, and R. S. Williams, “Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior,” small 5, 10581063 (2009).
4.D. B. Strukov and R. S. Williams, “Exponential ionic drift: fast switching and low volatility ofáthin-film memristors,” Applied Physics A 94, 515519 (2009).
5.L. Chua, “Resistance switching memories are memristors,” Applied Physics A 102, 765783 (2011).
6.J. Strunk, W. C. Vining, and A. T. Bell, “A study of oxygen vacancy formation and annihilation in submonolayer coverages of tio2 dispersed on mcm-48,” The Journal of Physical Chemistry C 114, 1693716945 (2010).
7.M. D. Pickett, D. B. Strukov, J. L. Borghetti, J. J. Yang, G. S. Snider, D. R. Stewart, and R. S. Williams, “Switching dynamics in titanium dioxide memristive devices,” Journal of Applied Physics 106, 074508 (2009).
8.A. Uchida, P. Davis, and S. Itaya, “Generation of information theoretic secure keys using a chaotic semiconductor laser,” Applied physics letters 83, 32133215 (2003).
9.Y. Yao, Y. Liu, S. Dong, Y. Yin, S. Yang, and X. Li, “Multi-state resistive switching memory with secure information storage in au/bife0. 95mn0. 05o3/la5/8ca3/8mno3 heterostructure,” Applied Physics Letters 100, 193504 (2012).
10.M. Noman, W. Jiang, P. A. Salvador, M. Skowronski, and J. A. Bain, “Computational investigations into the operating window for memristive devices based on homogeneous ionic motion,” Applied Physics A 102, 877883 (2011).
11.N. Hashem and S. Das, “Switching-time analysis of binary-oxide memristors via a nonlinear model,” Applied Physics Letters 100, 262106 (2012).
12.Z. Lin and H. Wang, “Efficient image encryption using a chaos-based pwl memristor,” IETE Technical Review 27, 318325 (2010).
13.J. Rajendran, G. S. Rose, R. Karri, and M. Potkonjak, “Nano-ppuf: A memristor-based security primitive,” VLSI (ISVLSI), 2012 IEEE Computer Society Annual Symposium on (IEEE, 2012), pp. 8487.
14.G. S. Rose, J. Rajendran, N. McDonald, R. Karri, M. Potkonjak, and B. Wysocki, “Hardware security strategies exploiting nanoelectronic circuits,” in Design Automation Conference (ASP-DAC), 2013 18th Asia and South Pacific (IEEE, 2013), pp. 368372.
15.B. Muthuswamy, “Implementing memristor based chaotic circuits,” International Journal of Bifurcation and Chaos 20, 13351350 (2010).
16.P. Koeberl, Ü. Kocabaş, and A.-R. Sadeghi, “Memristor pufs: a new generation of memory-based physically unclonable functions,” in Proceedings of the Conference on Design, Automation and Test in Europe (EDA Consortium, 2013), pp. 428431.
17.J. B. Wendt and M. Potkonjak, “The bidirectional polyomino partitioned ppuf as a hardware security primitive,” in Global Conference on Signal and Information Processing (GlobalSIP), 2013 IEEE (IEEE, 2013), pp. 257260.
18.S. Kannan, N. Karimi, O. Sinanoglu, and R. Karri, “Security vulnerabilities of emerging nonvolatile main memories and countermeasures,” Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on 34, 215 (2015).
19.H. Abunahla, D. Homouz, Y. Halawani, and B. Mohammad, “Modeling and device parameter design to improve reset time in binary-oxide memristors,” Applied Physics A 117, 10191023 (2014).
20.M. Curtin, Brute Force (Springer, 2005).
21.D. R. Stinson, Cryptography: theory and practice (CRC press, 2005).
22.A. J. Menezes, P. C. Van Oorschot, and S. A. Vanstone, Handbook of applied cryptography (CRC press, 1996).
23.H. C. Van Tilborg and S. Jajodia, Encyclopedia of cryptography and security (Springer Science & Business Media, 2011).
24.J. Rothe, “Some facets of complexity theory and cryptography: A five-lecture tutorial,” ACM Computing Surveys (CSUR) 34, 504549 (2002).
25.E. Gale, R. Mayne, A. Adamatzky, and B. de Lacy Costello, “Drop-coated titanium dioxide memristors,” Materials Chemistry and Physics 143, 524529 (2014).
26.D. B. Strukov, G. S. Snider, D. R. Stewart, and R. S. Williams, “The missing memristor found,” Nature 453, 8083 (2008).

Data & Media loading...


Article metrics loading...



This paper proposes novel secret key generation techniques using memristor devices. The approach depends on using the initial profile of a memristor as a master key. In addition, session keys are generated using the master key and other specified parameters. In contrast to existing memristor-based security approaches, the proposed development is cost effective and power efficient since the operation can be achieved with a single device rather than a crossbar structure. An algorithm is suggested and demonstrated using physics based Matlab model. It is shown that the generated keys can have dynamic size which provides perfect security. Moreover, the proposed encryption and decryption technique using the memristor based generated keys outperforms Triple Data Encryption Standard (3DES) and Advanced Encryption Standard (AES) in terms of processing time. This paper is enriched by providing characterization results of a fabricated microscale Al/TiO/Al memristor prototype in order to prove the concept of the proposed approach and study the impacts of process variations. The work proposed in this paper is a milestone towards System On Chip (SOC) memristor based security.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd