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1.
1.J.E. Brewer, G. Atwood, and R. Bez, “Phase change memories,” in Nonvolatile Memory Technologies with Emphasis on Flash, edited by J.E. Brewer and M. Gill (Wiley-Interscience, 2007), p. 707.
2.
2.R.F. Freitas and W.W. Wilcke, IBM Journal of Research and Development. 52, 439447 (2008).
http://dx.doi.org/10.1147/rd.524.0439
3.
3.B.C. Lee, E. Ipek, O. Mutlu, and D. Burger, in ISCA ’09 Proceedings of the 36th annual international symposium on Computer architecture (2009), pp. 2-13.
4.
4.Int’l Technology Roadmap for Semiconductors, http://www.itrs.net (2009).
5.
5.Phase Change Materials – Science and Application, edited by S. Raoux and M. Wuttig (Springer Verlag, 2009).
6.
6.S. Raoux, W. Welnic, and D. Ielmini, Chem. Rev. 110, 240267 (2010).
http://dx.doi.org/10.1021/cr900040x
7.
7.Shivaram Venkataraman, Niraj Tolia, Parthasarathy Ranganathan, and Roy H. Campbell, “Redesigning Data Structures for Non-Volatile Byte-Addressable Memory,” in Proceedings of USENIX Conference on File and Storage Technologies, February 15-17, 2011, San Jose, CA USA.
8.
8.Y.D. Choi, I.H. Song, M.-H. Park, H.J. Chung, S.H. Chang, B.K. Cho, J.Y. Kim, Y.H. Oh, D.M. Kwon, S.W. Jung, J.H. Shin, Y.H. Rho, C.S. Lee, M.G. Kang, J.Y. Lee, Y.J. Kwon, S.H. Kim, J.H. Kim, Y.J. Lee, Qi Wang, S.H. Cha, S.J. Ahn, Hideki Horii, J.W. Lee, K.S. Kim, H.S. Joo, KG. Lee, Y.T. Lee, J.H. Yoo, and G.T. Jeong, in Solid-State Circuits Conference Digest of Technical Papers, (ISSCC) IEEE International (2012), pp. 46-48.
9.
9.Q. He, Z. Li, J. H. Peng, Y. F. Deng, B. J. Zeng, W. Zhou, and X. S. Miao, Appl. Phys. Lett. 104, 223502 (2014).
http://dx.doi.org/10.1063/1.4880936
10.
10.R. E. Simpson, M. Krbal, P. Fons, A. V. Kolobov, J. Tominaga, T. Uruga, and H. Tanida, Nano Lett. 10, 414419 (2010).
http://dx.doi.org/10.1021/nl902777z
11.
11.S. W. Nam, H. S. Chung, Y. C. Lo, L. Qi, J. Li, Y. Lu, A. T. C. Johnson, Y. W. Jung, P. Nukala, and R. Agarwal, Science 336, 1561 (2012).
http://dx.doi.org/10.1126/science.1220119
12.
12.F. Xiong, M.-H. Bae, Y. Dai, A. D. Liao, A. Behnam, E. A. Carrion, S. Hong, D. Ielmini, and E. Pop, Nano Lett. 13, 464 (2013).
http://dx.doi.org/10.1021/nl3038097
13.
13.A.L. Lacaita and A. Redaelli, Microelectronic Engineering 109, 351356 (2013).
http://dx.doi.org/10.1016/j.mee.2013.02.105
14.
14.H.J. Kim, S. Seshadri, C.L. Dickey, and L. Chiu, ACM SIGOPS Operating Systems Review 48, 82-89 (2014).
http://dx.doi.org/10.1145/2626401.2626418
15.
15.H.J. Kim, S. Seshadri, C.L. Dickey, and L. Chiu, in Proceedings of the 12th USENIX Conference on File and Storage Technologies (FAST ’14) (Santa Clara, CA USA, 2014), pp. 1720.
16.
16.I.S. Kim, S.L. Cho, D.H. Im, E.H. Cho, D.H. Kim, G.H. Oh, D.H. Ahn, S.O. Park, S.W. Nam, J.T. Moon, and C.H. Chung, in Digest of Technical Papers, IEEE Symposium on VLSI Technology, 203-204 (2010).
17.
17.M.J. Kang, T.J. Park, Y.W. Kwon, D.H. Ahn, Y.S. Kang, H. Jeong, S.J. Ahn, Y.J. Song, sb.c. Kim, S.W. Nam, H.K. Kang, G.T. Jeongh, and C.H. Chung, in IEEE International Electron Device Meeting (IEDM), Digest of Technical Papers (2011), p. 39.
18.
18.F. Xiong, M.-H. Bae, Y. Dai, A. D. Liao, A. Behnam, E. A. Carrion, S. Hong, D. Ielmini, and E. Pop, Nano Lett. 13, 464-469 (2013).
http://dx.doi.org/10.1021/nl3038097
19.
19.J. Liang, R.G.D. Jeyasingh, H.-Y. Chen, and H.-S. Philip, IEEE Trans. Electron Devices 59, 1155-1163 (2012).
http://dx.doi.org/10.1109/TED.2012.2184542
20.
20.C.-F. Chen, A. Schrott, M.H. Lee, S. Raoux, Y.H. Shih, M. Breitwisch, F.H. Baumann, E.K. Lai, T.M. Shaw, P. Flaitz, R. Cheek, E.A. Joseph, S.-H. Chen, B. Rajendran, H.L. Lung, and C. Lam, in Proc. IEEE Int. Memory Workshop (2009), DOI: 10.1109/IMW.2009.5090589.
21.
21.B. Gleixner, F. Pellizzer, and R. Bez, in Non-Volatile Memory Technology Symposium (NVMTS), 2009 10th Annual, pp. 711.
22.
22.A. Padilla, G.W. Burr, K. Virwani, A. Debunne, C.T. Rettner, T. Topuria, P.M. Rice, B. Jackson, D. Dupouy, A.J. Kellock, R.M. Shelby, K. Gopalakrishnan, R.S. Shenoy, and B.N. Kurdi, in Electron Devices Meeting (IEDM), 2010 IEEE International, pp. 29.4.1-29.4.4.
23.
23.A.L. Lacaita and A. Redaelli, Microelectronic Engineering 109, 351356 (2013).
http://dx.doi.org/10.1016/j.mee.2013.02.105
24.
24.K. Do, D. Lee, D.-H. Ko, H. Sohn, and M.-H. Cho, Electrochem. Solid-State Lett. 13, H284-H286 (2010).
http://dx.doi.org/10.1149/1.3439647
25.
25.T.-Y. Yang, J.-Y. Cho, Y.-J. Park, and Y.-C. Joo, Acta Materialia 60, 20212030 (2012).
http://dx.doi.org/10.1016/j.actamat.2011.12.034
26.
26.Y.-C. Joo, T.-Y. Yang, J.-Y. Cho, and Y.-J. Park, J. Korean Ceram. Soc. 49, 43-47 (2012).
http://dx.doi.org/10.4191/kcers.2012.49.1.043
27.
27.J. R. Lloyd and S. Nakahara, Thin Solid Films 93, 281-286 (1982).
http://dx.doi.org/10.1016/0040-6090(82)90134-1
28.
28.S. Nakahara, Thin Solid Films 64, 149-161 (1979).
http://dx.doi.org/10.1016/0040-6090(79)90554-6
29.
29.F. Ying, R.W. Smith, and D. J. Srolovitz, Appl. Phys. Lett. 69, 3007 (1996).
http://dx.doi.org/10.1063/1.116821
30.
30.S. Privitera, E. Rimini, and R. Zonca, Appl. Phys. Lett. 85, 3044 (2004).
http://dx.doi.org/10.1063/1.1805200
31.
31.K. Kim, J.-C. Park, J.-G. Chung, S.A. Song, M.-C. Jung, Y.M. Lee, H.-J. Shin, B. Kuh, Y. Ha, and J.-S. Noh, Appl. Phys. Lett. 89, 243520 (2006).
http://dx.doi.org/10.1063/1.2408660
32.
32.K.B. Borisenko, Y. Chen, D.J.H. Cockayne, S.A. Song, and H.S. Jeong, Acta Materialia 59, 43354342 (2011).
http://dx.doi.org/10.1016/j.actamat.2011.03.057
33.
33.X. Zhou, L. Wu, Z. Song, F. Rao, M. Zhu, C. Peng, D. Yao, S. Song, B. Liu, and S. Feng, Appl. Phys. Lett. 101, 142104 (2012).
http://dx.doi.org/10.1063/1.4757137
34.
34.K. Wang, C. Steimer, D. Wamwangi, S. Ziegler, and M. Wuttig, Appl . Phys. A 80, 1611-1616 (2005).
http://dx.doi.org/10.1007/s00339-005-3232-2
35.
35.K. Wang, C. Steimer, D. Wamwangi, S. Ziegler, M. Wuttig, J. Tomforde, and W. Bensch, Microsyst. Technol. 13, 203-206 (2007).
http://dx.doi.org/10.1007/s00542-006-0156-5
36.
36.J. Zhou, Z. Sun, L. Xu, and R. Ahuja, Solid State Commun. 148, 113-116 (2008).
http://dx.doi.org/10.1016/j.ssc.2008.07.046
37.
37.H.J. Shin, Y.-S. Kang, A. Benayad, K.-H. Kim, Y.M. Lee, M.-C. Jung, T.-Y. Lee, D.-S. Suh, K.H.P. Kim, C. Kim, and Y. Khang, Appl. Phys. Lett. 93, 021905 (2008).
http://dx.doi.org/10.1063/1.2959730
38.
38.W.D. Song, L.P. Shi, X.S. Miao, and T.C. Chong, Appl. Phys. Lett. 90, 091904 (2007).
http://dx.doi.org/10.1063/1.2475390
39.
39.T.-J. Park, S.-Y. Choi, and M.-J. Kang, Thin Solid Films 515, 5049-5053 (2007).
http://dx.doi.org/10.1016/j.tsf.2006.10.045
40.
40.K.-J. Choi, S.-M. Yoon, N.-Y. Lee, S.-Y. Lee, Y.-S. Park, B.-G. Yu, and S.-O. Ryu, Thin Solid Films 516, 8810-8812 (2008).
http://dx.doi.org/10.1016/j.tsf.2008.02.014
41.
41.S.-W. Kim, W.-S. Lim, T.-W. Kim, and H.-Y. Lee, Jpn. J. Appl. Phys. 47, 5337-5341 (2008).
http://dx.doi.org/10.1143/JJAP.47.5337
42.
42.O. Amir and R. Kalish, J. Appl. Phys. 70, 4958 (1991).
http://dx.doi.org/10.1063/1.349043
43.
43.M. Kokkoris, P. Misaelides, S. Kossionides, Ch. Zarkadas, A. Lagoyannis, R. Vlastou, C. T. Papadopoulos, and A. Kontos, Nucl. Instrum. Methods Phys. Res., Sect. B 249(77), S117-S128 (2006).
44.
44.D. Mergel, D. Duschendorf, S. Eggert, R. Grammes, and B. Samset, Thin Solid Films 371, 218-224 (2000).
http://dx.doi.org/10.1016/S0040-6090(00)01015-4
45.
45.Y. Liu and P. H. Daum, J. Aerosol Sci. 39, 974-986 (2008).
http://dx.doi.org/10.1016/j.jaerosci.2008.06.006
46.
46.CRC handbook of chemistry and physics, edited by William M. Haynes (CRC press, 2013).
47.
47.Kenneth B. K. Teo, David B. Hash, Rodrigo G. Lacerda, N. L. Rupesinghe, M. S. Bell, S. H. Dalal, D. Bose, T. R. Govindan, B. A. Cruden, M. Chhowalla, G.A. J. Amaratunga, M. Meyyappan, and W. I. Milne, Nano Lett. 4, 921-926 (2004).
http://dx.doi.org/10.1021/nl049629g
48.
48.M. Boniardi, A. Redaelli, I. Tortorelli, F. Pellizzer, and A. Pirovano, Electron Device Lett., IEEE 33(4), 594-596 (2012).
http://dx.doi.org/10.1109/LED.2012.2185674
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/content/aip/journal/adva/6/2/10.1063/1.4942110
2016-02-11
2016-12-05

Abstract

The lower cyclic endurance of Phase Change Memory (PCM) devices limits the spread of its applications for reliable memory. The findings reported here show that micro-voids and excess vacancies that are produced during the deposition process and the subsequent growth in sputtered carbon-doped GeSbTe films is one of the major causes of device failure in PCM with cycling. We found that the size of voids in C(GeSbTe) films increased with increasing annealing temperature and the activation energy for the growth rate of voids was determined to be 2.22 eV. The film density, which is closely related to voids, varies with the deposition temperature and sputtering power used. The lower heat of vaporization of elemental Sb and Te compared to that for elemental Ge and C is a major cause of the low density of the film. It was possible to suppress void formation to a considerable extent by optimizing the deposition conditions, which leads to a dramatic enhancement in cyclic endurance by 2 orders of magnitude in PCM devices prepared at 300oC-300W compared to one prepared at 240oC-500W without change of compositions.

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