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/content/aip/journal/adva/6/2/10.1063/1.4942936
2016-02-23
2016-12-05

Abstract

We report detailed investigation of n-GaSb/n-InAsSb heterostructurephotodetectors for infrared photodetection at different temperatures and biases. Our results show that the heterostructurephotodetectors are capable of dual color photodetections at a fixed forward bias with its highest responsivity occurred at room temperature; With the decrease of the forward bias, a turning point, at which the photocurrent changes its direction, exist and the corresponding voltage values increases with the decrease of temperature; At all reverse biases, the photocurrents flow in the same direction but the maximum current occurs at about 205 K. A new model is proposed, which can well explain all the observations.

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