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Simple method for the growth of 4H silicon carbide on silicon substrate
3.K. Dong-Wan, C. Young-Jin, C. Kyoung Jin, P. Jae-Gwan, P. Jae-Hwan, M. P. Sergei, D. F. Vadim, P. A. Nikolay, I. G. Boris, M. R. Nikolay, and I. R. Alexander, Nanotechnology 19, 225706 (2008).
10.A. R. Moradkhani, H. R. Baharvandi, A. Vafaeesefat, and M. Tajdari, International Journal of Advanced Design and Manufacturing Technology 5, 7 (2012).
13.G. Yan, F. Zhang, Y. Niu, F. Yang, X. Liu, L. Wang, W. Zhao, G. Sun, and Y. Zeng, Applied Surface Science 353, 744-749 (2015).
15.C. Klingshirn, in Optical Properties. Part 1, edited by C. Klingshirn (Springer, Berlin Heidelberg, 2001), Vol. 34C1, pp. 96-96.
16.M. Shur, S. Rumyantsev, and M. E. Levinshtein, SiC Materials and Devices (World Scientific, 2007).
18.C. Kittel, Introduction to solid state physics (Wiley, Hoboken, NJ, 2005).
19.S. Adachi, Handbook on Physical Properties of Semiconductors (Springer US, 2004).
22.S. M. Pimenov, V. D. Frolov, A. V. Kudryashov, M. M. Lamanov, N. P. Abanshin, B. I. Gorfinkel, D. W. Kim, Y. J. Choi, J. H. Park, and J. G. Park, Diamond and Related Materials 17, 758-763 (2008).
23.G. L. HARRIS, Materials Science Research Center of Excellence (Howard university, Washington DC, 1953), p. 77.
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In this study we report thermal evaporation technique as a simple method for the growth of 4H silicon carbide on p-type silicon substrate. A mixture of Si and C60powder of high purity (99.99%) was evaporated from molybdenumboat. The as grown film was characterized by XRD,FTIR, UV-Vis Spectrophotometer and Hall Measurements. The XRD pattern displayed four peaks at 2Θ angles 28.550, 32.700, 36.100 and 58.900 related to Si (1 1 1), 4H-SiC (1 0 0), 4H-SiC (1 1 1) and 4H-SiC (2 2 2), respectively. FTIR, UV-Vis spectrophotometer and electrical properties further strengthened the 4H-SiC growth.
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