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Real-time observation of rotational twin formation during molecular-beam epitaxial growth of GaAs on Si (111) by x-ray diffraction
1.S. Takagi, T. Tezuka, T. Irisawa, S. Nakaharai, T. Numata, K. Usuda, N. Sugiyama, M. Shichijo, R. Nakane, and S. Sugahara, Solid-State Electron. 51, 526 (2007).
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The formation and evolution of rotational twin (TW) domains introduced by a stacking fault during molecular-beam epitaxialgrowth of GaAs on Si (111) substrates were studied by in situ x-ray diffraction. To modify the volume ratio of TW to total GaAs domains, GaAs was deposited under high and low group V/group III (V/III) flux ratios. For low V/III, there was less nucleation of TW than normal growth (NG) domains, although the NG and TW growth rates were similar. For high V/III, the NG and TW growth rates varied until a few GaAsmonolayers were deposited; the mean TW domain size was smaller for all film thicknesses.
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