No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Strain engineering band gap, effective mass and anisotropic Dirac-like cone in monolayer arsenene
1.K. S. Novoselov, A. K. Geim, S. V. Morozov, D. Jiang, Y. Zhang, S. V. Dubonos, I. V. Grigorieva, and A. A. Firsov, “Electric field effect in atomically thin carbon films,” Science 306, 666–669 (2004).
6.L. Li, Y. Yu, G. J. Ye, Q. Ge, X. Ou, H. Wu, D. Feng, X. H. Chen, and Y. Zhang, “Black phosphorus field-effect transistors,” Nature nanotechnology DOI:10.1038/nnano.2014.35 (2014).
7.H. Liu, A. T. Neal, Z. Zhu, Z. Luo, X. Xu, D. Tomnek, and P. D. Ye, “Phosphorene: An unexplored 2d semiconductor with a high hole mobility,” ACS Nano 8, 4033–4041 (2014).
8.W. Lu, H. Nan, J. Hong, Y. Chen, C. Zhu, Z. Liang, X. Ma, Z. Ni, C. Jin, and Z. Zhang, “Plasma-assisted fabrication of monolayer phosphorene and its raman characterization,” Nano Research 1–7.
9.J. R. Brent, N. Savjani, E. A. Lewis, S. J. Haigh, D. J. Lewis, and P. O’Brien, “Production of few-layer phosphorene by liquid exfoliation of black phosphorus,” Chemical Communications 50, 13338–13341 (2014).
10.E. D. e. Damien Hanlon and Claudia Backes, “Liquid exfoliation of solvent-stabilized few-layer black phosphorus for applications beyond electronics,” Nature Communications 6 (2015).
12.T. Low, A. S. Rodin, A. Carvalho, Y. Jiang, H. Wang, F. Xia, and A. H. Castro Neto, “Tunable optical properties of multilayer black phosphorus thin films,” Phys. Rev. B 90, 075434 (2014).
14.R. Fei, A. Faghaninia, R. Soklaski, J.-A. Yan, C. Lo, and L. Yang, “Enhanced thermoelectric efficiency via orthogonal electrical and thermal conductances in phosphorene,” Nano letters 14, 6393–6399 (2014).
17.J. Qiao, X. Kong, Z.-X. Hu, F. Yang, and W. Ji, “High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus,” Nature communications 5 (2014).
18.R. Fei and L. Yang, “Strain-engineering the anisotropic electrical conductance of few-layer black phosphorus,” Nano Letters 14, 2884–2889 (2014).
19.S. Zhang, Z. Yan, Y. Li, Z. Chen, and H. Zeng, “Atomically thin arsenene and antimonene: Semimetal–semiconductor and indirect–direct band-gap transitions,” Angewandte Chemie (2015).
21.L. Kou, Y. Ma, X. Tan, T. Frauenheim, A. Du, and S. Smith, “Structural and electronic properties of layered arsenic and antimony arsenide,” The Journal of Physical Chemistry C 119, 6918–6922 (2015).
22.Z. Zhu, J. Guan, and D. Tománek, “Strain-induced metal-semiconductor transition in monolayers and bilayers of gray arsenic: A computational study,” Physical Review B 91, 161404 (2015).
25.Z. Zhang, J. Xie, D. Yang, Y. Wang, M. Si, and D. Xue, “Manifestation of unexpected semiconducting properties in few-layer orthorhombic arsenene,” Applied Physics Express 8, 055201 (2015).
26.J. Han, J. Xie, Z. Zhang, D. Yang, M. Si, and D. Xue, “Negative Poissons ratios in few-layer orthorhombic arsenic: First-principles calculations,” Applied Physics Express 8, 041801 (2015).
and W.-M. Liu
, “Ultra-high mechanical stretchability and controllable topological phase transitions in two-dimensional arsenic
,” e-print arXiv:1501.04350
28.X. Peng, Q. Wei, and A. Copple, “Strain-engineered direct-indirect band gap transition and its mechanism in two-dimensional phosphorene,” Phys. Rev. B 90, 085402 (2014).
29.X. Han, H. Morgan Stewart, S. A. Shevlin, C. R. A. Catlow, and Z. X. Guo, “Strain and orientation modulated bandgaps and effective masses of phosphorene nanoribbons,” Nano letters 14, 4607–4614 (2014).
33.G. Kresse and J. Furthmüller, “Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set,” Computational Materials Science 6, 15–50 (1996).
See supplementary material at http://dx.doi.org/10.1063/1.4943548
for details of the evolution of band gaps and effective mass of arsenene under strain. The effect of the atomic distortion on the relaxed structures and phonon dispersion are presented as well.[Supplementary Material]
35.H.-J. Cui, X.-L. Sheng, Q.-B. Yan, Q.-R. Zheng, and G. Su, “Strain-induced dirac cone-like electronic structures and semiconductor-semimetal transition in graphdiyne,” Phys. Chem. Chem. Phys. 15, 8179–8185 (2013).
36.G. Wang, M. Si, A. Kumar, and R. Pandey, “Strain engineering of dirac cones in graphyne,” Applied Physics Letters 104 (2014).
38.C. Wang, Q. Xia, Y. Nie, and G. Guo, “Strain-induced gap transition and anisotropic dirac-like cones in monolayer and bilayer phosphorene,” Journal of Applied Physics 117, 124302 (2015).
39.Z. Xiang, G. Ye, C. Shang, B. Lei, N. Wang, K. Yang, D. Liu, F. Meng, X. Luo, L. Zou et al., “Pressure-induced electronic transition in black phosphorus,” Physical review letters 115, 186403 (2015).
40.Q. Liu, X. Zhang, L. Abdalla, A. Fazzio, and A. Zunger, “Switching a normal insulator into a topological insulator via electric field with application to phosphorene,” Nano letters 15, 1222–1228 (2015).
41.K. Dolui and S. Y. Quek, “Quantum-confinement and structural anisotropy result in electrically-tunable dirac cone in few-layer black phosphorous,” Scientific Reports 5, 11699 (2015).
42.J. Kim, S. S. Baik, S. H. Ryu, Y. Sohn, S. Park, B.-G. Park, J. Denlinger, Y. Yi, H. J. Choi, and K. S. Kim, “Observation of tunable band gap and anisotropic dirac semimetal state in black phosphorus,” Science 349, 723–726 (2015).
45.H. Morgan Stewart, S. A. Shevlin, C. R. A. Catlow, and Z. X. Guo, “Compressive straining of bilayer phosphorene leads to extraordinary electron mobility at a new conduction band edge,” Nano letters 15, 2006–2010 (2015).
Article metrics loading...
The electronic properties of two-dimensional puckered arsenene have been investigated using first-principles calculations. The effective mass of electrons exhibits highly anisotropic dispersion in intrinsic puckered arsenene. Futhermore, we find that out-of-plane strain is effective in tuning the band gap, as the material undergoes the transition into a metal from an indirect gap semiconductor. Remarkably, we observe the emergence of Dirac-like cone with in-plane strain. Strain modulates not only the band gap of monolayer arsenene, but also the effective mass. Our results present possibilities for engineering the electronic properties of two-dimensional puckered arsenene and pave a way for tuning carrier mobility of future electronic devices.
Full text loading...
Most read this month