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/content/aip/journal/adva/6/3/10.1063/1.4944483
1.
1.M. A. Khan, A. Bhattarai, J. N. Kuznia, and D. T. Olson, Appl. Phys. Lett. 63, 1214 (1993).
http://dx.doi.org/10.1063/1.109775
2.
2.A. Dadgar, A. Strittmatter, J. Bläsing, M. Poschenrieder, O. Contreras, P. Veit, T. Riemann, F. Bertram, A. Reiher, A. Krtschil, A. Diez, T. Hempel, T. Finger, A. Kasic, M. Schubert, D. Bimberg, F. A. Ponce, J. Christen, and A. Krost, Phys. Stat. Sol. C 0, 1583 (2003).
http://dx.doi.org/10.1002/pssc.200303122
3.
3.H. Yu, D. Caliskan, and E. Ozbay, J. Appl. Phys. 100, 033501 (2006).
http://dx.doi.org/10.1063/1.2221520
4.
4.S. Heikman, S. Keller, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 81, 439 (2002).
http://dx.doi.org/10.1063/1.1490396
5.
5.S. Kato, Y. Satoh, H. Sasaki, I. Masayuki, and S. Yoshida, J. Cryst. Growth 298, 831 (2007).
http://dx.doi.org/10.1016/j.jcrysgro.2006.10.192
6.
6.S. K. G. Parish, S. P. Denbaars, and U. K. Mishra, J. Electron. Mater. 29, 6 (2000).
http://dx.doi.org/10.1007/s11664-000-0087-3
7.
7.J. T. Chen, U. Forsberg, and E. Janzén, Appl. Phys. Lett. 102, 193506 (2013).
http://dx.doi.org/10.1063/1.4804600
8.
8.D. D. Koleske, A. E. Wickenden, R. L. Henry, and M. E. Twigg, J. Cryst. Growth 242, 55 (2002).
http://dx.doi.org/10.1016/S0022-0248(02)01348-9
9.
9.K. Cheng, H. Liang, M. V. Hove, K. Geens, B. D. Jaeger, P. Srivastava, X. Kang, P. Favia, H. Bender, S. Decoutere, J. Dekoster, J. I. d. A. Borniquel, S. W. Jun, and H. Chung, Appl. Phys. Express 5, 011002 (2012).
http://dx.doi.org/10.1143/APEX.5.011002
10.
10.B. Leung, J. Han, and Q. Sun, Phys. Stat. Sol. C 11, 437 (2014).
11.
11.S. Raghavan, X. Weng, E. Dickey, and J. M. Redwing, Appl. Phys. Lett. 88, 041904 (2006).
http://dx.doi.org/10.1063/1.2168020
12.
12.T. F. Kuech, D. J. Wolford, E. Veuhnoff, V. Deline, P. M. Mooney, R. Potemski, and J. Bradley, J. Appl. Phys. 62, 632 (1987).
http://dx.doi.org/10.1063/1.339792
13.
13.P. Boguslawski, E. L. Briggs, and J. Bernholc, Appl. Phys. Lett. 69, 233 (1996).
http://dx.doi.org/10.1063/1.117934
14.
14.C. H. Seager, A. F. Wright, J. Yu, and W. Gotz, J. Appl. Phys. 92, 6553 (2002).
http://dx.doi.org/10.1063/1.1518794
15.
15.Z. Zhang, G. Yu, X. Zhang, X. Deng, S. Li, Y. Fan, S. Sun, L. Song, S. Tan, D. Wu, W. Li, W. Huang, K. Fu, Y. Cai, Q. Sun, and B. Zhang, IEEE Trans. Electron Devices 63, 731 (2016).
http://dx.doi.org/10.1109/TED.2015.2510445
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/content/aip/journal/adva/6/3/10.1063/1.4944483
2016-03-14
2016-09-27

Abstract

Electrical breakdown characteristics of AlGaN buffer layers grown on Si(111) are investigated by varying the carbon concentration ([C]: from ∼1016 to 1019 cm−3), Al-composition (x = 0 and 7%), and buffer thickness (from 1.6 to 3.1 μm). A quantitative relationship between the growth conditions and carbon concentration ([C]) is established, which can guide to grow the Ga(Al)N layer with a given [C]. It is found that the carbon incorporation is sensitive to the growth temperature (T) (exponential relationship between [C] and 1/T) and the improvement of breakdown voltage by increasing [C] is observed to be limited when [C] exceeding 1019 cm−3, which is likely due to carbon self-compensation. By increasing the highly resistive (HR) AlGaN buffer thickness from 1.6 to 3.1 μm, the leakage current is greatly reduced down to 1 μA/mm at a bias voltage of 1000 V.

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