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Electrical degradation of double-Schottky barrier in ZnO varistors
3.Ü. Özgür, Ya. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Doğan, V. Avrutin, S.-J. Cho, and H. Morkoç, J. Appl. Phys. 98, 041301 (2005).
14.J. Liu, Ph.D. Thesis, Tsinghua University, 2011.
19.K. Takahashia, T. Miyoshia, K. Maedaa, T. Yamazakia, and S. Ohwadaa, in MRS Proceedings (Cambridge University Press, 1981), Vol.5, p. 399.
35.G. E. Pike, in MRS Proceedings, Boston Park Plaza Hotel, Boston, Massachusetts, U.S.A, January 1981 (Cambridge University Press), pp. 369-379.
49.H. Kawamura and M. Nawata, in 11th International Symposium on High-Voltage Engineering (ISH 99) (1999), Vol.2, pp. 325-328.
53.J. B. Bernstein, Ph.D. Thesis, Massachusetts Institute of Technology, 1990.
54.J. B. Bernstein, IEEE T. Dielect. El. In. 27, 152 (1992).
85.M. Takada and S. Yoshikado, Key Engineering Materials (Trans Tech Publ, Edited2007), Vol. 350, pp. 213-216.
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Researches on electrical degradation of double-Schottky barrier in ZnOvaristors are reviewed, aimed at the constitution of a full picture of universal degradation mechanism within the perspective of defect. Recent advances in study of ZnOmaterials by atomic-scale first-principles calculations are partly included and discussed, which brings to our attention distinct cognition on the native point defects and their profound impact on degradation.
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