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1.Joachim Piprek, physica status solidi. A 207(No.10), 2217 (2010).
2.Justin Iveland, Lucio Martinelli, Jacques Peretti, James S. Speck, and Claude Weisbuch, Phys. Rev. Lett. 110(17), 177406 (2013).
3.Min-Ho Kim, Appl Phys Lett (No.18), 183507 (2007).
4.Martin F. Schubert, Jiuru Xu, Jong Kyu Kim, E. Fred Schubert, Min Ho Kim, Sukho Yoon, Soo Min Lee, Cheolsoo Sone, Tan Sakong, and Yongjo Park, Appl Phys Lett 93(4), 041102 (2008).
5.Martin F. Schubert, Sameer Chhajed, Jong Kyu Kim, E. Fred Schubert, Daniel D. Koleske, Mary H. Crawford, Stephen R. Lee, Arthur J. Fischer, Gerald Thaler, and Michael A. Banas, Appl Phys Lett 91(23), 231114 (2007).
6.J.1 Hader, J. V.1 Moloney, and S. W.2 Koch, Appl Phys Lett (No.22), 221106 (2010).
7.B. Monemar and B.E. Sernelius, Appl Phys Lett (No.18), 181103 (2007).
8.David S. Meyaard, Guan-Bo Lin, Qifeng Shan, Jaehee Cho, E. Fred Schubert, Hyunwook Shim, Min-Ho Kim, and Cheolsoo Sone, Appl Phys Lett (No.25), 251115 (2011).
9.Yan Dawei, Li Lisha, Ren Jian, Wang Fuxue, Yang Guofeng, Xiao Shaoqing, and Gu Xiaofeng, Journal of Semiconductors (No.4), 044007 (2014).
10.Hongjian Li, Junjie Kang, Panpan Li, Jun Ma, Hui Wang, Meng Liang, Zhicong Li, Jing Li, Xiaoyan Yi, and Guohong Wang, Appl Phys Lett (No.1), 011105 (2013).
11.Ji Panfeng, Liu Naixin, Wei Tongbo, Liu Zhe, Lu Hongxi, Wang Junxi, and Li Jinmin, Journal of Semiconductors (No.11), 114006 (2011).
12.Lei Yan, Liu Zhiqiang, He Miao, Yi Xiaoyan, Wang Junxi, Li Jinmin, Zheng Shuwen, and Li Shuti, Journal of Semiconductors (No.5), 054006 (2015).
13.Y. Li, Y. Gao, M. He, J. Zhou, Y. Lei, L. Zhang, K. Zhu, and Y. Chen, Display Technology, Journal of (No.4), 244 (2013).
14.N. F. Gardner, G. O. Müller, Y. C. Shen, G. Chen, S. Watanabe, W. Götz, and M. R. Krames, Appl Phys Lett 91(24), (2007).
15.Yen-Kuang Kuo, Jih-Yuan Chang, Miao-Chan Tsai, and Sheng-Horng Yen, Appl Phys Lett 95(1), 011116 (2009).
16.Si-Ming Zeng, Guang-Han Fan, and Shu-Wen Zheng, Journal of Materials Science: Materials in Electronics (No.7), 5347 (2015).

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In this work, a novel carrier concentration adjusting insertion layer for InGaN/GaN multiple quantum wellslight-emitting diodes was proposed to mitigate the efficiency droop and improve optical output properties at high current density. The band diagrams and carrier distributions were investigated numerically and experimentally. The results indicate that due to the newly formed electron barrier and the adjusted built-in field near the active region, the hole injection has been improved and a better radiative recombination can be achieved. Compared to the conventional LED, the light output power of our new structure with the carrier concentration adjusting layers is enhanced by 127% at 350 mA , while the efficiency only droops to be 88.2% of its peak efficiency.


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