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/content/aip/journal/adva/6/3/10.1063/1.4944624
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/content/aip/journal/adva/6/3/10.1063/1.4944624
2016-03-16
2016-12-07

Abstract

In this work, a novel carrier concentration adjusting insertion layer for InGaN/GaN multiple quantum wellslight-emitting diodes was proposed to mitigate the efficiency droop and improve optical output properties at high current density. The band diagrams and carrier distributions were investigated numerically and experimentally. The results indicate that due to the newly formed electron barrier and the adjusted built-in field near the active region, the hole injection has been improved and a better radiative recombination can be achieved. Compared to the conventional LED, the light output power of our new structure with the carrier concentration adjusting layers is enhanced by 127% at 350 mA , while the efficiency only droops to be 88.2% of its peak efficiency.

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