No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Highly improved photo-induced bias stability of sandwiched triple layer structure in sol-gel processed fluorine-doped indium zinc oxide thin film transistor
7.J. Jang, D. G. Kim, D. M. Kim, S.-J. Choi, J.-H. Lim, J.-H. Lee, Y.-S. Kim, B. D. Ahn, and D. H. Kim, Appl. Phys. Lett. 105, 152108 (2014).
8.J. K. Jeong, J. Mater. 28, 2071 (2013).
9.J.-H. Shin, J.-S. Lee, C.-S. Hwang, S.-H. Ko Park, W.-S. Cheong, M. K. Ryu, C.-W. Byun, J.-I. Lee, and H. Chu, ETRI J. 31 (2009).
11.K. H. Ji, J.-I. Kim, H. Y. Jung, S. Y. Park, R. Choi, U. K. Kim, C. S. Hwang, D. Lee, H. Hwang, and J. K. Jeong, Appl. Phys. Lett. 98, 103509 (2011).
15.G. H. Kim, W. H. Jeong, B. Du Ahn, H. S. Shin, H. J. Kim, H. J. Kim, M.-K. Ryu, K.-B. Park, J.-B. Seon, and S.-Y. Lee, Appl. Phys. Lett. 96, 163506 (2010).
17.J. S. Seo, J. H. Jeon, Y. H. Hwang, H. Park, M. Ryu, S. H. Park, and B. S. Bae, Sci. Rep. 3, 2085 (2013).
19.C. G. Choi, S.-J. Seo, and B.-S. Bae, ECS J. Solid State Sci. Technol. 11, H7 (2008).
22.M. E. Lopes, H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira, Appl. Phys. Lett. 95, 063502 (2009).
23.T.-C. Chen, T.-C. Chang, C.-T. Tsai, T.-Y. Hsieh, S.-C. Chen, C.-S. Lin, M.-C. Hung, C.-H. Tu, J.-J. Chang, and P.-L. Chen, Appl. Phys. Lett. 97, 112104 (2010).
24.K. H. Ji, J.-I. Kim, H. Y. Jung, S. Y. Park, Y.-G. Mo, J. H. Jeong, J.-Y. Kwon, M.-K. Ryu, S. Y. Lee, R. Choi, and J. K. Jeong, J. Electrochem. Soc. 157, H983 (2010).
Article metrics loading...
In order to improve the reliability of TFT, an Al2O3 insulating layer is inserted between active fluorine doped indium zinc oxide (IZO:F) thin films to form a sandwiched triple layer. All the thin films were fabricated via low-cost sol-gel process. Due to its large energy bandgap and high bonding energy with oxygen atoms, the Al2O3 layer acts as a photo-induced positive charge blocking layer that effectively blocks the migration of both holes and V o2+ toward the interface between the gate insulator and the semiconductor. The inserted Al2O3 triple layer exhibits a noticeably low turn on voltage shift of −0.7 V under NBIS as well as the good TFT performance with a mobility of 10.9 cm2/V ⋅ s. We anticipate that this approach can be used to solve the stability issues such as NBIS, which is caused by inescapable oxygen vacancies.
Full text loading...
Most read this month