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Ferroelectric properties of lead-free polycrystalline CaBi2
thin films on glass substrates
6.N. Setter, D. Damjanovic, L. Eng, G. Fox, S. Gevorgian, S. Hong, A. Kingon, H. Kohlstedt, N. Y. Park, G. B. Stephenson, I. Stolitchnov, A. K. Taganstev, D. V. Taylor, T. Yamada, and S. Streiffer, J. Appl. Phys. 100, 051606 (2006).
12.S. Khasa, P. Singh, S. Sanghi, N. Singh, and A. Agarwal, J. Integr. Sci. Tech. 2, 13 (2014).
22.F.-C. Chiu, Adv. Mater. Sci. Eng. 2014, 18 (2014).
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CaBi2Nb2O9 (CBNO) thin film, a lead-free ferroelectric material, was prepared on a Pt/Ta/glass substrate via pulsed laser deposition. The Ta film was deposited on the glass substrate for a buffer layer. A (115) preferred orientation of the polycrystalline CBNO thin film was verified via X-ray diffraction measurements. The CBNO thin film on a glass substrate exhibited good ferroelectric properties with a remnant polarization of 4.8 μC/cm2 (2Pr ∼9.6 μC/cm2), although it had lower polarization than the epitaxially c-oriented CBNO thin film reported previously. A mosaic-like ferroelectric domain structure was observed via piezoresponse force microscopy. Significantly, the polycrystalline CBNO thin film showed much faster switching behavior within about 100 ns than that of the epitaxially c-oriented CBNO thin film.
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