Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1.S. H. K. Park, C. S. Hwang, M. Ryu, S. Yang, C. Byun, J. Shin, J. I. Lee, K. Lee, M. S. Oh, and S. Im, “Transparent and photo-stable ZnO thin-film transistors to drive an active matrix organic-light-emitting-diode display panel,” Adv. Mater. 21, 678682 (2009).
2.K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors,” Nature 432(7061), 488492 (2004) Nov.
3.H. Xu, L. F. Lan, M. Xu, J. H. Zou, L. Wang, D. Wang, and J. B. Peng, “High performance indium-zinc-oxide thin-film transistors fabricated with a back-channel-etch-technique,” Appl. Phys. Lett. 99(25), 253501-1253501-4 (2011), Sep.
4.M. Shur and M. Hack, “Physics of amorphous silicon based alloy field effect transistors,” J. Appl. Phys. 55(10), 38313842 (1984) May.
5.P. Servati, D. Striakhilev, and A. Nathan, “Above-Threshold Parameter Extraction and Modeling for Amorphous Silicon Thin-Film Transistors,” IEEE Trans. Electron Devices 50(11), 22272235 (2003) Nov.
6.Z. Tang and C. R. Wie, “Capacitance-voltage characteristics and device simulation of bias temperature stressed a-Si:H TFTs,” Solid-State Electron. 54(3), 259267 (2010) Mar.
7.T. Kamiya, k. Nomura, and H. Hosono, “Origins of High Mobility and Low Operation Voltage of Amorphous Oxide TFTs: Electronic Structure, Electron Transport, Defects and Doping,” J. Display Technol. 5(7), 273288 (2009) Jul.
8.T.-C. Fung, C.-S. Chuang, C. Chen, K. Abe, R. Cottle, M. Townsend, H. Kumomi, and J. Kanicki, “Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors”.
9.E. N. Cho, J. H. Kang, C. E. Kim, P. Moon, and I. Yun, “Analysis of Bias Stress Instability in Amorphous InGaZnO Thin-Film Transistors,” IEEE Trans. Electron Devices 11(1), 112117 (2011) Mar.
10.J.-S. Park, J. K. Jeong, Y.-G. Mo, H. D. Kim, and C.-J. Kim, “Control of threshold voltage in ZnO-based oxide thin film transistors,” Appl. Phys. Lett. 93(3), 033513-1033513-3 (2008), Jul.
11.K. Abe, N. Kaji, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, “Simple Analytical Model of On Operation of Amorphous In–Ga–Zn–O Thin-Film Transistors,” IEEE Trans. Electron Devices 58(10), 34633471 (2003) Oct.
12.T. C. Fung, K. Abe, H. Kumomi, and J. Kanicki, “Electrical instability of RF sputter amorphous In-Ga-Zn-O thin-film transistors,” J. Display Technol. 5(12), 452461 (2009) Dec.
13.L. Qiang and R. Yao, “A New Definition of the Threshold Voltage for Amorphous InGaZnO Thin-Film Transistors,” IEEE Trans. Electron Devices 61(7), 23942397 (2014) Jul.
14.S. Lee, K. Ghaffarzadeh, A. Nathan, J. Robertson, S. Jeon, C. Kim, I. Song, and U.-I. Chung, “Trap-limited and percolation conduction mechanisms in amorphous oxide semiconductor thin film transistors,” Appl. Phys. Lett. 98(20), 203508-1203508-3 (2011), May.
15.M. Ghittorelli, F. Torricelli, L. Colalongo, and Z. M. Kovacs-Vajna, “Accurate Analytical Physical Modeling of Amorphous InGaZnO Thin-Film Transistors Accounting for Trapped and Free Charges,” IEEE Trans. Electron Devices 61(12), 41054112 (2014) Dec.
16.Z. Zong, L. Li, J. Jang, N. Lu, and M. Liu, “Analytical surface-potential compact model for amorphous-IGZO thin-film transistors,” J. Appl. Phys. 117(21), 215705 (2015) Jun.
17.M. Bae, K. M. Lee, E. Cho, H. Kwon, D. M. Kim, and Dae Hwan Kim, “Analytical Current and Capacitance Models for Amorphous Indium-Gallium-Zinc-Oxide Thin-Film Transistors,” IEEE Trans. Electron Devices 60(10), 34653472 (2013) Oct.
18.R. Chen, X. Zheng, W. Deng, and Z. Wu, “A physics-based analytical solution to the surface potential of polysilicon thin film transistors using the Lambert W function,” Solid State Electron. 51(6), 975981 (2007) Jun.
19.W. Deng, J. Huang, X. Ma, and T. Ning, “An Explicit Surface-Potential-Based Model for Amorphous IGZO Thin-Film Transistors Including Both Tail and Deep States,” IEEE Electron Device Lett. 35(1), 7880 (2014) Jan.
20.H. H. Hsieh, T. Kamiya, K. Nomura, H. Hosono, and C. C. Wu, “Modeling of amorphous InGaZnO4 thin film transistors and their subgap density of states,” Appl. Phys. Lett. 92(13), 133503-1133503-3 (2008) Apr.
21.P. Migliorato, M. Seok, and J. Jang, “Determination of flat band voltage in thin film transistors: The case of amorphous-indium gallium zinc oxide,” Appl. Phys. Lett. 100(7), 073506-1073506-4 (2012) Feb.
22.P. Migliorato, S. W.-B. Tam, O. K. B. Lui, and T. Shimoda, “Determination of the surface potential in thin-film transistors from C –V measurements,” J. Appl. Phys. 89(11), 64496452 (2001) Feb.

Data & Media loading...


Article metrics loading...



In the application of the Lambert function, the surface potential for amorphous oxide semiconductorthin-film transistors (AOS TFTs) under the subthreshold region is approximated by an asymptotic equation only considering the tail states. While the surface potential under the above-threshold region is approximated by another asymptotic equation only considering the free carriers. The intersection point between these two asymptotic equations represents the transition from the weak accumulation to the strong accumulation. Therefore, the gate voltage corresponding to the intersection point is defined as threshold voltage of AOS TFTs. As a result, an analytical expression for the threshold voltage is derived from this novel definition. It is shown that the threshold voltage achieved by the proposed physics-based model is agreeable with that extracted by the conventional linear extrapolation method. Furthermore, we find that the free charge per unit area in the channel starts increasing sharply from the threshold voltage point, where the concentration of the free carriers is a little larger than that of the localized carriers. The proposed model for the threshold voltage of AOS TFTs is not only physically meaningful but also mathematically convenient, so it is expected to be useful for characterizing and modeling AOS TFTs.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd