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LaSrMnO (LSMO) thin films were deposited on (001)SrTiO(STO) and n-type doped Nb:SrTiO(NSTO) single crystal substrates respectively. The metal to insulator transition temperature(T) of LSMO film on NSTO is lower than that on STO, and the T of LSMO can be tuned by changing the applied current in the LSMO/NSTO p-n junction. Such behaviors were considered to be related to the carrier concentration redistribution in LSMO film caused by the change of depletion layer thickness in p-n junction which depends greatly on the applied electric field. The phenomenon could be used to configure artificial devices and exploring the underlying physics.


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