Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
1.M. Razeghi, P. IEEE 90, 1006 (2002).
2.L. W. Sang, M. Y. Liao, and M. Sumiya, Sensors 13, 10482 (2013).
3.D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, Appl. Phys. Lett. 105, 023507 (2014).
4.R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, Appl. Phys. Lett. 94, 222102 (2009).
5.W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, and H. T. Hsueh, IEEE Sens. J. 11, 999 (2011).
6.M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996).
7.S. Ghanbarzadeh, S. Abbaszadeh, and K. S. Karim, IEEE Electron Device Lett. 35, 235 (2014).
8.A. Khosropour and A. Sazonov, IEEE Electron Device Lett. 35, 768 (2014).
9.R. Suzuki, S. Nakagomi, and Y. Kokubun, Appl. Phys. Lett. 98, 131114 (2011).
10.M. Orita, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett. 77, 4166 (2000).
11.V. Kuryatkov, A. Chandolu, B. Borisov, G. Kipshidze, K. Zhu, S. Nikishin, H. Temkin, and M. Holtz, Appl. Phys. Lett. 82, 1323 (2003).
12.Y. Z. Chiou, Y. C. Lin, and C. K. Wang, IEEE Electron Device Lett. 28, 264 (2007).
13.Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, Appl. Phys. Lett. 93, 173505 (2008).
14.T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, Appl. Phys. Express 1, 011202 (2008).
15.P Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, Appl. Phys. Lett. 88, 153107 (2006).
16.S. Nakagomi, T. Momo, S. Takahashi, and Y. Kokubun, Appl. Phys. Lett. 103, 072105 (2013).
17.D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, X. C. Guo, H. Yan, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, Opt. Mater. Express 4, 1067 (2014).
18.T. Oshima, T. Okuno, and S. Fujita, Jpn. J. Appl. Phys. 46, 7217 (2007).
19.C. H. Wan, X. Z. Zhang, X. L. Gao, J. M. Wang, and X. Y. Tan, Nature 477, 304 (2011).
20.S. Nakagomi and Y. Kokubun, J. Cryst. Growth 349, 12 (2012).

Data & Media loading...


Article metrics loading...



A four-terminal photodetector was fabricated on the ()-dominant -GaOthin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo voltage ratio of 15 was achieved, which is comparable to that of previously-reported -GaO interdigital metal-semiconductor-metalphotoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metaldevices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection.


Full text loading...


Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd