Skip to main content

News about Scitation

In December 2016 Scitation will launch with a new design, enhanced navigation and a much improved user experience.

To ensure a smooth transition, from today, we are temporarily stopping new account registration and single article purchases. If you already have an account you can continue to use the site as normal.

For help or more information please visit our FAQs.

banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
/content/aip/journal/adva/6/4/10.1063/1.4947137
1.
1.M. Razeghi, P. IEEE 90, 1006 (2002).
http://dx.doi.org/10.1109/JPROC.2002.1021565
2.
2.L. W. Sang, M. Y. Liao, and M. Sumiya, Sensors 13, 10482 (2013).
http://dx.doi.org/10.3390/s130810482
3.
3.D. Y. Guo, Z. P. Wu, Y. H. An, X. C. Guo, X. L. Chu, C. L. Sun, L. H. Li, P. G. Li, and W. H. Tang, Appl. Phys. Lett. 105, 023507 (2014).
http://dx.doi.org/10.1063/1.4890524
4.
4.R. Suzuki, S. Nakagomi, Y. Kokubun, N. Arai, and S. Ohira, Appl. Phys. Lett. 94, 222102 (2009).
http://dx.doi.org/10.1063/1.3147197
5.
5.W. Y. Weng, T. J. Hsueh, S. J. Chang, G. J. Huang, and H. T. Hsueh, IEEE Sens. J. 11, 999 (2011).
http://dx.doi.org/10.1109/JSEN.2010.2062176
6.
6.M. Razeghi and A. Rogalski, J. Appl. Phys. 79, 7433 (1996).
http://dx.doi.org/10.1063/1.362677
7.
7.S. Ghanbarzadeh, S. Abbaszadeh, and K. S. Karim, IEEE Electron Device Lett. 35, 235 (2014).
http://dx.doi.org/10.1109/LED.2013.2295976
8.
8.A. Khosropour and A. Sazonov, IEEE Electron Device Lett. 35, 768 (2014).
http://dx.doi.org/10.1109/LED.2014.2358559
9.
9.R. Suzuki, S. Nakagomi, and Y. Kokubun, Appl. Phys. Lett. 98, 131114 (2011).
http://dx.doi.org/10.1063/1.3574911
10.
10.M. Orita, H. Ohta, M. Hirano, and H. Hosono, Appl. Phys. Lett. 77, 4166 (2000).
http://dx.doi.org/10.1063/1.1330559
11.
11.V. Kuryatkov, A. Chandolu, B. Borisov, G. Kipshidze, K. Zhu, S. Nikishin, H. Temkin, and M. Holtz, Appl. Phys. Lett. 82, 1323 (2003).
http://dx.doi.org/10.1063/1.1557325
12.
12.Y. Z. Chiou, Y. C. Lin, and C. K. Wang, IEEE Electron Device Lett. 28, 264 (2007).
http://dx.doi.org/10.1109/LED.2007.893224
13.
13.Z. G. Ju, C. X. Shan, D. Y. Jiang, J. Y. Zhang, B. Yao, D. X. Zhao, D. Z. Shen, and X. W. Fan, Appl. Phys. Lett. 93, 173505 (2008).
http://dx.doi.org/10.1063/1.3002371
14.
14.T. Oshima, T. Okuno, N. Arai, N. Suzuki, S. Ohira, and S. Fujita, Appl. Phys. Express 1, 011202 (2008).
http://dx.doi.org/10.1143/APEX.1.011202
15.
15.P Feng, J. Y. Zhang, Q. H. Li, and T. H. Wang, Appl. Phys. Lett. 88, 153107 (2006).
http://dx.doi.org/10.1063/1.2193463
16.
16.S. Nakagomi, T. Momo, S. Takahashi, and Y. Kokubun, Appl. Phys. Lett. 103, 072105 (2013).
http://dx.doi.org/10.1063/1.4818620
17.
17.D. Y. Guo, Z. P. Wu, P. G. Li, Y. H. An, H. Liu, X. C. Guo, H. Yan, G. F. Wang, C. L. Sun, L. H. Li, and W. H. Tang, Opt. Mater. Express 4, 1067 (2014).
http://dx.doi.org/10.1364/OME.4.001067
18.
18.T. Oshima, T. Okuno, and S. Fujita, Jpn. J. Appl. Phys. 46, 7217 (2007).
http://dx.doi.org/10.1143/JJAP.46.7217
19.
19.C. H. Wan, X. Z. Zhang, X. L. Gao, J. M. Wang, and X. Y. Tan, Nature 477, 304 (2011).
http://dx.doi.org/10.1038/nature10375
20.
20.S. Nakagomi and Y. Kokubun, J. Cryst. Growth 349, 12 (2012).
http://dx.doi.org/10.1016/j.jcrysgro.2012.04.006
http://aip.metastore.ingenta.com/content/aip/journal/adva/6/4/10.1063/1.4947137
Loading
/content/aip/journal/adva/6/4/10.1063/1.4947137
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/adva/6/4/10.1063/1.4947137
2016-04-14
2016-12-10

Abstract

A four-terminal photodetector was fabricated on the ()-dominant -GaOthin film which was deposited in a plasma-assisted molecular beam epitaxy system. The suitability of this film for solar-blind DUV detection was proved by its transmission spectra. Moreover, the device operating in a specific voltage-current mode can accurately detect the DUV radiation both qualitatively and quantitatively. Accordingly, a dark/photo voltage ratio of 15 was achieved, which is comparable to that of previously-reported -GaO interdigital metal-semiconductor-metalphotoconductor. More importantly, the aperture ratio of our proposed device exceeds 80%, nearly doubling that of the conventional interdigital metal-semiconductor-metaldevices including photoconductor and Schottky-type photodiode, which can intensively benefit the detection efficiency. Furthermore, it was found the dark/photo voltage ratio was nearly trebled with the assistance of two Zener diodes, and further enhancement can be expected by increasing the operating current and/or adopting Zener diodes with smaller Zener voltage. Therefore, this work provides a promising alternative for solar-blind DUV detection.

Loading

Full text loading...

/deliver/fulltext/aip/journal/adva/6/4/1.4947137.html;jsessionid=L3QoClkUkpuqdr00mPzpGx0R.x-aip-live-03?itemId=/content/aip/journal/adva/6/4/10.1063/1.4947137&mimeType=html&fmt=ahah&containerItemId=content/aip/journal/adva
true
true

Access Key

  • FFree Content
  • OAOpen Access Content
  • SSubscribed Content
  • TFree Trial Content
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
/content/realmedia?fmt=ahah&adPositionList=
&advertTargetUrl=//oascentral.aip.org/RealMedia/ads/&sitePageValue=aipadvances.aip.org/6/4/10.1063/1.4947137&pageURL=http://scitation.aip.org/content/aip/journal/adva/6/4/10.1063/1.4947137'
Right1,Right2,Right3,